component
KGF50N60KDA
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KEC Semicon IGBT Transistors / Modules, TO-247-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownKGF50N60KDA
KEC Semicon · IGBT Transistors / Modules · TO-247-3
KGF50N60KDA from KEC Semicon, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated gate control terminal. Gate-emitter voltage rating VGES = +/-20V; typical gate threshold VGE(th) = 5.5V (4.5V min, 7V max at IC=5mA). Drive with VGE=15V for full enhancement; total gate charge Qg ~200nC. |
| 2 | C | passive | Collector. IGBT high-side power terminal and cathode of the co-packaged anti-parallel fast recovery diode. Collector-emitter breakdown VCES = 600V; continuous IC = 100A @ Tc=25C (50A @ Tc=100C); pulsed ICM = 150A. Electrically connected to the metal tab of the TO-247 package. |
| 3 | E | passive | Emitter. IGBT low-side power terminal and anode of the co-packaged anti-parallel fast recovery diode. Diode continuous forward current IF = 50A @ Tc=100C, IFM = 100A, typical VF = 1.8V @ IF=50A. |
| TAB | C | passive | Metal mounting tab, electrically connected to the Collector. Provides thermal path to heatsink; junction-to-case thermal resistance Rth(JC) = 0.45 C/W (IGBT), 1.0 C/W (diode). Must be electrically isolated from heatsink if grounded chassis is used. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEC Semicon |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | 600 | V | Ta=25 | 1 | ||
| Gate-Emitter Voltage | VGES | -20 | 20 | V | 1 | ||
| Collector Current | IC | 100 | A | Tc=25 | 1 | ||
| Collector Current | IC | 50 | A | Tc=100 | 1 | ||
| Pulsed Collector Current | ICM | 150 | A | Repetitive rating: pulse width limited by max. junction temperature | 1 | ||
| Diode Continuous Forward Current | IF | 50 | A | Tc=100 | 1 | ||
| Diode Maximum Forward Current | IFM | 100 | A | 1 | |||
| Maximum Power Dissipation | PD | 277 | W | Tc=25 | 1 | ||
| Maximum Power Dissipation | PD | 111 | W | Tc=100 | 1 | ||
| Maximum Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case (IGBT) | RthJC | 0.45 | °C/W | 1 | |||
| Thermal Resistance, Junction to Case (DIODE) | RthJC | 1 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RthJA | 40 | °C/W | 1 | |||
| Collector-Emitter Breakdown Voltage | BVCES | 600 | V | VGE=0V, IC=250μA | 2 | ||
| Collector Cut-off Current | ICES | 250 | μA | VGE=0V, VCE=600V | 2 | ||
| Gate Leakage Current | IGES | -100 | 100 | nA | VCE=0V, VGE=±20V | 2 | |
| Gate Threshold Voltage | VGE(th) | 4.5 | 5.5 | 7 | V | VGE=VCE, IC=5mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.65 | 2.1 | V | VGE=15V, IC=50A | 2 | |
| Turn-On Switching Loss (TC=25) | Eon | 1.25 | 1.65 | mJ | VCC=300V, IC=50A, VGE=15V, RG=10, Inductive Load, TC=25 (Note 1) | 2 | |
| Turn-Off Switching Loss (TC=25) | Eoff | 0.95 | 1.25 | mJ | VCC=300V, IC=50A, VGE=15V, RG=10, Inductive Load, TC=25 (Note 1) | 2 | |
| Total Switching Loss (TC=25) | Ets | 2.2 | 2.9 | mJ | VCC=300V, IC=50A, VGE=15V, RG=10, Inductive Load, TC=25 (Note 1) | 2 | |
| Input Capacitance | Cies | 4000 | 5200 | pF | VCE=30V, VGE=0V, f=1MHz | 2 | |
| Short Circuit Withstand Time | tsc | 10 | μs | VCC=300V, VGE=15V, TC=100 | 2 | ||
| Diode Forward Voltage (TC=25) | VF | 1.8 | 2.5 | V | IF=50A, TC=25 | 3 |
CAD (KiCad official)
- Symbol:
KGF50N60KDA - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
kgf50n60kda-etched.step/kgf50n60kda-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kgf50n60kda.step/kgf50n60kda.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEC Semicon datasheet (8 pp, sha256
d3a5395d9ddae9ea, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).