CSD18540Q5B — 60 V N-channel Power MOSFET

{
  "schema_version": 1,
  "type": "component",
  "slug": "csd18540q5b",
  "title": "CSD18540Q5B — 60 V N-channel Power MOSFET",
  "brief": "Texas Instruments CSD18540Q5B: 60 V, N-channel NexFET power MOSFET in SON 5x6 mm. 1.8 mOhm RDS(on) at VGS=10 V, 41 nC total gate charge, 205 A continuous drain current.",
  "version": "1.0.1",
  "tags": [],
  "license": "MIT",
  "sample_prompts": [
    {
      "prompt": "What is the RDS(on) of the CSD18540Q5B?"
    },
    {
      "prompt": "Show me the pinout for CSD18540Q5B"
    },
    {
      "prompt": "Is the CSD18540Q5B suitable for a 48 V synchronous buck converter?"
    },
    {
      "prompt": "What is the total gate charge and gate-to-drain charge of CSD18540Q5B?"
    },
    {
      "prompt": "What package is the CSD18540Q5B in?"
    }
  ],
  "component": {
    "mpn": "CSD18540Q5B — 60 V N-channel Power MOSFET",
    "manufacturer": "Texas Instruments",
    "package": "SON-8 (5.00 mm x 6.00 mm)",
    "pin_count": null,
    "category": "MOSFET",
    "subcategory": "",
    "body_size": null,
    "parts": {},
    "distributor_links": {}
  },
  "readme": "# CSD18540Q5B\n\n**60-V, N-Channel NexFET™ Power MOSFET** — Texas Instruments\n\nUltra-low-Qg / low-RDS(on) N-channel MOSFET in a SON 5 mm × 6 mm package. Designed for synchronous rectification, isolated-converter primary switches, motor control, and DC-DC conversion.\n\n## Summary\n\n| Parameter | Typical | Unit |\n|---|---|---|\n| V<sub>DS</sub> (Drain-to-Source Voltage) | 60 | V |\n| Q<sub>g</sub> (Gate Charge Total, V<sub>GS</sub> = 10 V) | 41 | nC |\n| Q<sub>gd</sub> (Gate-to-Drain Charge) | 6.7 | nC |\n| R<sub>DS(on)</sub> @ V<sub>GS</sub> = 10 V | 1.8 | mΩ |\n| R<sub>DS(on)</sub> @ V<sub>GS</sub> = 4.5 V | 2.6 | mΩ |\n| V<sub>GS(th)</sub> (Threshold Voltage) | 1.9 | V |\n\nPackage: SON 5.00 mm × 6.00 mm, 8-pin (VSON-CLIP / DNK), part mark `CSD18540`.\n\n## Features\n\n- Ultra-low Qg and Qgd\n- Low thermal resistance (R<sub>θJC</sub> typ 0.8 °C/W)\n- Avalanche rated (E<sub>AS</sub> = 320 mJ)\n- Lead-free, RoHS, halogen-free\n- SON 5 mm × 6 mm plastic package\n\n## Applications\n\n- DC-DC conversion\n- Secondary-side synchronous rectifier\n- Isolated-converter primary-side switch\n- Motor control\n\n## Pin Configuration\n\n![Pinout](./pinout.png)\n\nTop view, SON 8-pin (DNK):\n\n| Pin(s) | Name | Function |\n|---|---|---|\n| 1 | G | Gate |\n| 2, 3, 4 | S | Source |\n| 5, 6, 7, 8 | D | Drain |\n\n## Absolute Maximum Ratings (T<sub>A</sub> = 25 °C)\n\n| Symbol | Parameter | Value | Unit |\n|---|---|---|---|\n| V<sub>DS</sub> | Drain-to-Source Voltage | 60 | V |\n| V<sub>GS</sub> | Gate-to-Source Voltage | ±20 | V |\n| I<sub>D</sub> | Continuous Drain Current (package-limited) | 100 | A |\n| I<sub>D</sub> | Continuous Drain Current (silicon-limited, T<sub>C</sub> = 25 °C) | 205 | A |\n| I<sub>D</sub> | Continuous Drain Current (T<sub>A</sub> = 25 °C) | 29 | A |\n| I<sub>DM</sub> | Pulsed Drain Current (T<sub>A</sub> = 25 °C) | 400 | A |\n| P<sub>D</sub> | Power Dissipation (T<sub>A</sub> = 25 °C) | 3.8 | W |\n| P<sub>D</sub> | Power Dissipation (T<sub>C</sub> = 25 °C) | 188 | W |\n| T<sub>J</sub>, T<sub>stg</sub> | Operating Junction, Storage Temperature | −55 to 175 | °C |\n| E<sub>AS</sub> | Avalanche Energy, single pulse (I<sub>D</sub> = 80 A, L = 0.1 mH, R<sub>G</sub> = 25 Ω) | 320 | mJ |\n\nNotes: Typical R<sub>θJA</sub> = 40 °C/W on a 1-in², 2-oz Cu pad, 0.06-in FR4. Max R<sub>θJC</sub> = 0.8 °C/W, pulse ≤ 100 µs, duty ≤ 1 %.\n\n## Electrical Characteristics (T<sub>A</sub> = 25 °C unless noted)\n\n### Static\n\n| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |\n|---|---|---|---|---|---|---|\n| BV<sub>DSS</sub> | Drain-to-source voltage | V<sub>GS</sub> = 0 V, I<sub>D</sub> = 250 µA | 60 | | | V |\n| I<sub>DSS</sub> | Drain-to-source leakage | V<sub>GS</sub> = 0 V, V<sub>DS</sub> = 48 V | | | 1 | µA |\n| I<sub>GSS</sub> | Gate-to-source leakage | V<sub>DS</sub> = 0 V, V<sub>GS</sub> = ±20 V | | | 100 | nA |\n| V<sub>GS(th)</sub> | Gate threshold voltage | V<sub>DS</sub> = V<sub>GS</sub>, I<sub>D</sub> = 250 µA | 1.5 | 1.9 | 2.3 | V |\n| R<sub>DS(on)</sub> | On resistance | V<sub>GS</sub> = 4.5 V, I<sub>D</sub> = 28 A | | 2.6 | 3.3 | mΩ |\n| R<sub>DS(on)</sub> | On resistance | V<sub>GS</sub> = 10 V, I<sub>D</sub> = 28 A | | 1.8 | 2.2 | mΩ |\n| g<sub>fs</sub> | Transconductance | V<sub>DS</sub> = 6 V, I<sub>D</sub> = 28 A | | 116 | | S |\n\n### Dynamic (V<sub>GS</sub> = 0 V, V<sub>DS</sub> = 30 V, f = 1 MHz unless noted)\n\n| Symbol | Parameter | Typ | Max | Unit |\n|---|---|---|---|---|\n| C<sub>iss</sub> | Input capacitance | 3250 | 4230 | pF |\n| C<sub>oss</sub> | Output capacitance | 622 | 808 | pF |\n| C<sub>rss</sub> | Reverse transfer capacitance | 15 | 20 | pF |\n| R<sub>G</sub> | Series gate resistance | 0.8 | 1.6 | Ω |\n| Q<sub>g</sub> (4.5 V) | Gate charge total | 20 | 26 | nC |\n| Q<sub>g</sub> (10 V) | Gate charge total | 41 | 53 | nC |\n| Q<sub>gd</sub> | Gate-to-drain charge | 6.7 | | nC |\n| Q<sub>gs</sub> | Gate-to-source charge | 8.8 | | nC |\n| Q<sub>g(th)</sub> | Gate charge at threshold | 6.3 | | nC |\n| Q<sub>oss</sub> | Output charge (V<sub>GS</sub> = 0, V<sub>DS</sub> = 30 V) | 83 | | nC |\n| t<sub>d(on)</sub> | Turn-on delay (V<sub>GS</sub> = 10 V, I<sub>DS</sub> = 28 A, R<sub>G</sub> = 0 Ω) | 6 | | ns |\n| t<sub>r</sub> | Rise time | 13 | | ns |\n| t<sub>d(off)</sub> | Turn-off delay | 20 | | ns |\n| t<sub>f</sub> | Fall time | 3 | | ns |\n\n### Diode Characteristics\n\n| Symbol | Parameter | Test Conditions | Typ | Max | Unit |\n|---|---|---|---|---|---|\n| V<sub>SD</sub> | Diode forward voltage | I<sub>SD</sub> = 28 A, V<sub>GS</sub> = 0 V | 0.8 | 1 | V |\n| Q<sub>rr</sub> | Reverse recovery charge | V<sub>DS</sub> = 30 V, I<sub>F</sub> = 28 A, di/dt = 300 A/µs | 145 | | nC |\n| t<sub>rr</sub> | Reverse recovery time | | 62 | | ns |\n\n## Thermal\n\n| Metric | Typ | Max | Unit |\n|---|---|---|---|\n| R<sub>θJC</sub> (Junction-to-case) | | 0.8 | °C/W |\n| R<sub>θJA</sub> (Junction-to-ambient) | | 50 | °C/W |\n\nR<sub>θJC</sub> based on 1-in² (6.45 cm²), 2-oz (0.071 mm) Cu pad on 1.5-in × 1.5-in × 3.81-cm (1.52-mm) FR4 PCB.\n\n## Typical Characteristics\n\n![RDS(on) vs VGS](./rds_vs_vgs.png)\n![Gate Charge](./gate_charge.png)\n\n## Package and Ordering\n\n- **Package**: SON 5.00 mm × 6.00 mm plastic (DNK / VSON-CLIP), 8 pins, body thickness 1.0 mm\n- **Orderable**: `CSD18540Q5B` — 2500 units on 13-inch reel, `CSD18540Q5BT` — 250 units on 7-inch reel\n- **Lead finish**: NIPDAU / SN, MSL Level 1 260 °C\n- **Operating temp**: −55 to 175 °C\n- **Part marking**: `CSD18540`\n\n## Source\n\nDatasheet: [SLPS488B, Rev. B, April 2017](https://www.ti.com/lit/ds/symlink/csd18540q5b.pdf)\n",
  "author": {
    "id": "695820315b5f1e4db2fcf602",
    "name": "Kyle Bergstedt",
    "email": "[email protected]"
  },
  "visibility": {
    "public": true
  },
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  "metadata": {},
  "created_at": "2026-05-28T05:36:47.908Z",
  "updated_at": "2026-05-28T05:36:47.908Z"
}