CSD18540Q5B — 60 V N-channel Power MOSFET
UnreviewedTexas Instruments CSD18540Q5B: 60 V, N-channel NexFET power MOSFET in SON 5x6 mm. 1.8 mOhm RDS(on) at VGS=10 V, 41 nC total gate charge, 205 A continuous drain current.
CSD18540Q5B
60-V, N-Channel NexFET™ Power MOSFET — Texas Instruments
Ultra-low-Qg / low-RDS(on) N-channel MOSFET in a SON 5 mm × 6 mm package. Designed for synchronous rectification, isolated-converter primary switches, motor control, and DC-DC conversion.
Summary
| Parameter | Typical | Unit |
|---|---|---|
| VDS (Drain-to-Source Voltage) | 60 | V |
| Qg (Gate Charge Total, VGS = 10 V) | 41 | nC |
| Qgd (Gate-to-Drain Charge) | 6.7 | nC |
| RDS(on) @ VGS = 10 V | 1.8 | mΩ |
| RDS(on) @ VGS = 4.5 V | 2.6 | mΩ |
| VGS(th) (Threshold Voltage) | 1.9 | V |
Package: SON 5.00 mm × 6.00 mm, 8-pin (VSON-CLIP / DNK), part mark CSD18540.
Features
- Ultra-low Qg and Qgd
- Low thermal resistance (RθJC typ 0.8 °C/W)
- Avalanche rated (EAS = 320 mJ)
- Lead-free, RoHS, halogen-free
- SON 5 mm × 6 mm plastic package
Applications
- DC-DC conversion
- Secondary-side synchronous rectifier
- Isolated-converter primary-side switch
- Motor control
Pin Configuration
Top view, SON 8-pin (DNK):
| Pin(s) | Name | Function |
|---|---|---|
| 1 | G | Gate |
| 2, 3, 4 | S | Source |
| 5, 6, 7, 8 | D | Drain |
Absolute Maximum Ratings (TA = 25 °C)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 60 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (package-limited) | 100 | A |
| ID | Continuous Drain Current (silicon-limited, TC = 25 °C) | 205 | A |
| ID | Continuous Drain Current (TA = 25 °C) | 29 | A |
| IDM | Pulsed Drain Current (TA = 25 °C) | 400 | A |
| PD | Power Dissipation (TA = 25 °C) | 3.8 | W |
| PD | Power Dissipation (TC = 25 °C) | 188 | W |
| TJ, Tstg | Operating Junction, Storage Temperature | −55 to 175 | °C |
| EAS | Avalanche Energy, single pulse (ID = 80 A, L = 0.1 mH, RG = 25 Ω) | 320 | mJ |
Notes: Typical RθJA = 40 °C/W on a 1-in², 2-oz Cu pad, 0.06-in FR4. Max RθJC = 0.8 °C/W, pulse ≤ 100 µs, duty ≤ 1 %.
Electrical Characteristics (TA = 25 °C unless noted)
Static
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 µA | 60 | V | ||
| IDSS | Drain-to-source leakage | VGS = 0 V, VDS = 48 V | 1 | µA | ||
| IGSS | Gate-to-source leakage | VDS = 0 V, VGS = ±20 V | 100 | nA | ||
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 µA | 1.5 | 1.9 | 2.3 | V |
| RDS(on) | On resistance | VGS = 4.5 V, ID = 28 A | 2.6 | 3.3 | mΩ | |
| RDS(on) | On resistance | VGS = 10 V, ID = 28 A | 1.8 | 2.2 | mΩ | |
| gfs | Transconductance | VDS = 6 V, ID = 28 A | 116 | S |
Dynamic (VGS = 0 V, VDS = 30 V, f = 1 MHz unless noted)
| Symbol | Parameter | Typ | Max | Unit |
|---|---|---|---|---|
| Ciss | Input capacitance | 3250 | 4230 | pF |
| Coss | Output capacitance | 622 | 808 | pF |
| Crss | Reverse transfer capacitance | 15 | 20 | pF |
| RG | Series gate resistance | 0.8 | 1.6 | Ω |
| Qg (4.5 V) | Gate charge total | 20 | 26 | nC |
| Qg (10 V) | Gate charge total | 41 | 53 | nC |
| Qgd | Gate-to-drain charge | 6.7 | nC | |
| Qgs | Gate-to-source charge | 8.8 | nC | |
| Qg(th) | Gate charge at threshold | 6.3 | nC | |
| Qoss | Output charge (VGS = 0, VDS = 30 V) | 83 | nC | |
| td(on) | Turn-on delay (VGS = 10 V, IDS = 28 A, RG = 0 Ω) | 6 | ns | |
| tr | Rise time | 13 | ns | |
| td(off) | Turn-off delay | 20 | ns | |
| tf | Fall time | 3 | ns |
Diode Characteristics
| Symbol | Parameter | Test Conditions | Typ | Max | Unit |
|---|---|---|---|---|---|
| VSD | Diode forward voltage | ISD = 28 A, VGS = 0 V | 0.8 | 1 | V |
| Qrr | Reverse recovery charge | VDS = 30 V, IF = 28 A, di/dt = 300 A/µs | 145 | nC | |
| trr | Reverse recovery time | 62 | ns |
Thermal
| Metric | Typ | Max | Unit |
|---|---|---|---|
| RθJC (Junction-to-case) | 0.8 | °C/W | |
| RθJA (Junction-to-ambient) | 50 | °C/W |
RθJC based on 1-in² (6.45 cm²), 2-oz (0.071 mm) Cu pad on 1.5-in × 1.5-in × 3.81-cm (1.52-mm) FR4 PCB.
Typical Characteristics
Package and Ordering
- Package: SON 5.00 mm × 6.00 mm plastic (DNK / VSON-CLIP), 8 pins, body thickness 1.0 mm
- Orderable:
CSD18540Q5B— 2500 units on 13-inch reel,CSD18540Q5BT— 250 units on 7-inch reel - Lead finish: NIPDAU / SN, MSL Level 1 260 °C
- Operating temp: −55 to 175 °C
- Part marking:
CSD18540
Source
Datasheet: SLPS488B, Rev. B, April 2017
