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CSD18540Q5B — 60 V N-channel Power MOSFET

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by Kyle Bergstedt

Texas Instruments CSD18540Q5B: 60 V, N-channel NexFET power MOSFET in SON 5x6 mm. 1.8 mOhm RDS(on) at VGS=10 V, 41 nC total gate charge, 205 A continuous drain current.

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CSD18540Q5B

60-V, N-Channel NexFET™ Power MOSFET — Texas Instruments

Ultra-low-Qg / low-RDS(on) N-channel MOSFET in a SON 5 mm × 6 mm package. Designed for synchronous rectification, isolated-converter primary switches, motor control, and DC-DC conversion.

Summary

Parameter Typical Unit
VDS (Drain-to-Source Voltage) 60 V
Qg (Gate Charge Total, VGS = 10 V) 41 nC
Qgd (Gate-to-Drain Charge) 6.7 nC
RDS(on) @ VGS = 10 V 1.8 mΩ
RDS(on) @ VGS = 4.5 V 2.6 mΩ
VGS(th) (Threshold Voltage) 1.9 V

Package: SON 5.00 mm × 6.00 mm, 8-pin (VSON-CLIP / DNK), part mark CSD18540.

Features

  • Ultra-low Qg and Qgd
  • Low thermal resistance (RθJC typ 0.8 °C/W)
  • Avalanche rated (EAS = 320 mJ)
  • Lead-free, RoHS, halogen-free
  • SON 5 mm × 6 mm plastic package

Applications

  • DC-DC conversion
  • Secondary-side synchronous rectifier
  • Isolated-converter primary-side switch
  • Motor control

Pin Configuration

Pinout

Top view, SON 8-pin (DNK):

Pin(s) Name Function
1 G Gate
2, 3, 4 S Source
5, 6, 7, 8 D Drain

Absolute Maximum Ratings (TA = 25 °C)

Symbol Parameter Value Unit
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (package-limited) 100 A
ID Continuous Drain Current (silicon-limited, TC = 25 °C) 205 A
ID Continuous Drain Current (TA = 25 °C) 29 A
IDM Pulsed Drain Current (TA = 25 °C) 400 A
PD Power Dissipation (TA = 25 °C) 3.8 W
PD Power Dissipation (TC = 25 °C) 188 W
TJ, Tstg Operating Junction, Storage Temperature −55 to 175 °C
EAS Avalanche Energy, single pulse (ID = 80 A, L = 0.1 mH, RG = 25 Ω) 320 mJ

Notes: Typical RθJA = 40 °C/W on a 1-in², 2-oz Cu pad, 0.06-in FR4. Max RθJC = 0.8 °C/W, pulse ≤ 100 µs, duty ≤ 1 %.

Electrical Characteristics (TA = 25 °C unless noted)

Static

Symbol Parameter Test Conditions Min Typ Max Unit
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 µA 60 V
IDSS Drain-to-source leakage VGS = 0 V, VDS = 48 V 1 µA
IGSS Gate-to-source leakage VDS = 0 V, VGS = ±20 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.5 1.9 2.3 V
RDS(on) On resistance VGS = 4.5 V, ID = 28 A 2.6 3.3 mΩ
RDS(on) On resistance VGS = 10 V, ID = 28 A 1.8 2.2 mΩ
gfs Transconductance VDS = 6 V, ID = 28 A 116 S

Dynamic (VGS = 0 V, VDS = 30 V, f = 1 MHz unless noted)

Symbol Parameter Typ Max Unit
Ciss Input capacitance 3250 4230 pF
Coss Output capacitance 622 808 pF
Crss Reverse transfer capacitance 15 20 pF
RG Series gate resistance 0.8 1.6 Ω
Qg (4.5 V) Gate charge total 20 26 nC
Qg (10 V) Gate charge total 41 53 nC
Qgd Gate-to-drain charge 6.7 nC
Qgs Gate-to-source charge 8.8 nC
Qg(th) Gate charge at threshold 6.3 nC
Qoss Output charge (VGS = 0, VDS = 30 V) 83 nC
td(on) Turn-on delay (VGS = 10 V, IDS = 28 A, RG = 0 Ω) 6 ns
tr Rise time 13 ns
td(off) Turn-off delay 20 ns
tf Fall time 3 ns

Diode Characteristics

Symbol Parameter Test Conditions Typ Max Unit
VSD Diode forward voltage ISD = 28 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS = 30 V, IF = 28 A, di/dt = 300 A/µs 145 nC
trr Reverse recovery time 62 ns

Thermal

Metric Typ Max Unit
RθJC (Junction-to-case) 0.8 °C/W
RθJA (Junction-to-ambient) 50 °C/W

RθJC based on 1-in² (6.45 cm²), 2-oz (0.071 mm) Cu pad on 1.5-in × 1.5-in × 3.81-cm (1.52-mm) FR4 PCB.

Typical Characteristics

RDS(on) vs VGS
Gate Charge

Package and Ordering

  • Package: SON 5.00 mm × 6.00 mm plastic (DNK / VSON-CLIP), 8 pins, body thickness 1.0 mm
  • Orderable: CSD18540Q5B — 2500 units on 13-inch reel, CSD18540Q5BT — 250 units on 7-inch reel
  • Lead finish: NIPDAU / SN, MSL Level 1 260 °C
  • Operating temp: −55 to 175 °C
  • Part marking: CSD18540

Source

Datasheet: SLPS488B, Rev. B, April 2017