component
RS6N120BHTB1
Public Made by Adomby adom
ROHM Semicon MOSFETs, HSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownRS6N120BHTB1
ROHM Semicon · MOSFETs · HSOP-8
RS6N120BHTB1 from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal, connected internally to pins 2 and 3 and to the body diode anode; the datasheet gives a continuous body diode forward current IS of 85 A max. |
| 2 | Source | passive | Source terminal, connected internally to pins 1 and 3; the datasheet gives a continuous drain current of ±120 A at Tc=25°C and a pulsed drain current of ±540 A. |
| 3 | Source | passive | Source terminal, connected internally to pins 1 and 2; the gate-source voltage limit is ±20 V relative to the source. |
| 4 | Gate | input | Gate terminal with a maximum gate-source voltage of ±20 V, a threshold voltage of 2.0 to 4.0 V at ID=1 mA, and a gate-source leakage of ±500 nA max. |
| 5 | Drain | passive | Drain terminal, connected internally to pins 6, 7 and 8, with a drain-source voltage rating VDSS of 80 V. |
| 6 | Drain | passive | Drain terminal, connected internally to pins 5, 7 and 8, with a continuous drain current of ±135 A (silicon limit, VGS=10V). |
| 7 | Drain | passive | Drain terminal, connected internally to pins 5, 6 and 8, with a maximum on-resistance RDS(on) of 3.3 mΩ at VGS=10V, ID=90A. |
| 8 | Drain | passive | Drain terminal, connected internally to pins 5, 6 and 7, with a zero gate voltage drain current IDSS of 5 µA max at VDS=80V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | HSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
RS6N120BHTB1 - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: HSOP-8 (KiCad packages3D, STEP)
- 3D model files:
rs6n120bhtb1-etched.step/rs6n120bhtb1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs6n120bhtb1.step/rs6n120bhtb1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
9ec6017224e211b1, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).