component
BRCS4614SC
Public Made by Adomby adom
Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBRCS4614SC
Foshan Blue Rocket Elec · MOSFETs · SOP-8
BRCS4614SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (Q2), rated for VDSS 40V and ID 6A at TA=25°C. |
| 2 | G2 | input | Gate of the N-channel MOSFET (Q2), with absolute maximum VGSS of ±20V and threshold VGS(th) of 1V min to 3V max. |
| 3 | S1 | passive | Source of the P-channel MOSFET (Q1), rated for VDSS -40V and ID -5A at TA=25°C. |
| 4 | G1 | input | Gate of the P-channel MOSFET (Q1), with absolute maximum VGSS of ±20V and threshold VGS(th) of -1.0V to -3.0V. |
| 5 | D1 | passive | Drain of the P-channel MOSFET (Q1), connected internally with pin 6, rated for VDS -40V. |
| 6 | D1 | passive | Drain of the P-channel MOSFET (Q1), connected internally with pin 5, rated for VDS -40V. |
| 7 | D2 | passive | Drain of the N-channel MOSFET (Q2), connected internally with pin 8, rated for VDS 40V. |
| 8 | D2 | passive | Drain of the N-channel MOSFET (Q2), connected internally with pin 7, rated for VDS 40V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDSS | 40 | V | 2 | |||
| Drain-Source Voltage (P-channel) | VDSS | -40 | V | 2 | |||
| Gate-Source Voltage (N- and P-channel) | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (N-channel) | ID | 6 | A | TA=25℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -5 | A | TA=25℃ | 2 | ||
| Continuous Drain Current (N-channel) | ID | 5 | A | TA=70℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -4 | A | TA=70℃ | 2 | ||
| Pulsed Drain Current (N-channel) | IDM | 20 | A | 2 | |||
| Pulsed Drain Current (P-channel) | IDM | -20 | A | 2 | |||
| Power Dissipation (N- and P-channel) | PD | 2 | W | TA=25℃ | 2 | ||
| Power Dissipation (N- and P-channel) | PD | 1.28 | W | TA=70℃ | 2 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Maximum Junction-to-Ambient (N- and P-channel) | RθJA | 62.5 | ℃/W | t≤10s | 2 | ||
| Maximum Junction-to-Ambient (N- and P-channel) | RθJA | 110 | ℃/W | Steady-State | 2 | ||
| Maximum Junction-to-Lead (N- and P-channel) | RθJL | 50 | ℃/W | Steady-State | 2 | ||
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 40 | 44 | V | VGS=0V ID=250μA | 3 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | μA | VDS=40V VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 5 | μA | VDS=40V VGS=0V TJ=55℃ | 3 | ||
| Gate-Body Leakage Current (N-channel) | IGSS | 100 | nA | VGS=±20V VDS=0V | 3 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS ID=250μA | 3 |
| On-State Drain Current (N-channel) | ID(on) | 20 | A | VDS=10V VGS=5.0V | 3 | ||
| Static Drain-Source On-Resistance (N-channel) | RDS(on) | 17.5 | 31 | mΩ | VGS=10V ID=6A | 3 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(on) | 22.8 | 45 | mΩ | VGS=4.5V ID=5.0A | 3 | |
| Diode Forward Voltage (N-channel) | VSD | 0.73 | 1 | V | VGS=0V IS=1.0A | 3 | |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -40 | -46 | V | VGS=0V ID=-250μA | 6 | |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | μA | VDS=-40V VGS=0V | 6 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -5 | μA | VDS=-40V VGS=0V TJ=55℃ | 6 | ||
| Gate-Body Leakage Current (P-channel) | IGSS | 100 | nA | VGS=±20V VDS=0V | 6 | ||
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -1.6 | -3 | V | VDS=VGS ID=-250μA | 6 |
| On-State Drain Current (P-channel) | ID(on) | 6 | A | VDS=-5V VGS=-10V | 6 | ||
| Static Drain-Source On-Resistance (P-channel) | RDS(on) | 38 | 45 | mΩ | VGS=-10V ID=-5.0A | 6 | |
| Static Drain-Source On-Resistance (P-channel) | RDS(on) | 49 | 63 | mΩ | VGS=-4.5V ID=-2.0A | 6 | |
| Diode Forward Voltage (P-channel) | VSD | -0.76 | -1 | V | VGS=0V IS=-1.0A | 6 |
CAD (KiCad official)
- Symbol:
BRCS4614SC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
brcs4614sc-etched.step/brcs4614sc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);brcs4614sc.step/brcs4614sc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (11 pp, sha256
07d96516b9d38a45, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).