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BRCS4614SC

Public Made by Adom

by adom

Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 22d ago
viewers brcs4614sc: viewers · Ray 22d ago
brcs4614sc-etched.glb brcs4614sc: factory component page (tier=lcsc) · Ray 22d ago
brcs4614sc-etched.step brcs4614sc: factory component page (tier=lcsc) · Ray 22d ago
brcs4614sc-hero.glb brcs4614sc: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
brcs4614sc-hero.overlay.json Publish 0.1.0 · Ray 22d ago
brcs4614sc.glb Publish 0.1.0 · Ray 22d ago
brcs4614sc.kicad_mod Publish 0.1.0 · Ray 22d ago
brcs4614sc.kicad_sym Publish 0.1.0 · Ray 22d ago
brcs4614sc.lbr Publish 0.1.0 · Ray 22d ago
brcs4614sc.step Publish 0.1.0 · Ray 22d ago
package.json Publish 0.1.0 · Ray 22d ago
page.json brcs4614sc: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 16d ago
README.md brcs4614sc: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 16d ago

BRCS4614SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS4614SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of the N-channel MOSFET (Q2), rated for VDSS 40V and ID 6A at TA=25°C.
2 G2 input Gate of the N-channel MOSFET (Q2), with absolute maximum VGSS of ±20V and threshold VGS(th) of 1V min to 3V max.
3 S1 passive Source of the P-channel MOSFET (Q1), rated for VDSS -40V and ID -5A at TA=25°C.
4 G1 input Gate of the P-channel MOSFET (Q1), with absolute maximum VGSS of ±20V and threshold VGS(th) of -1.0V to -3.0V.
5 D1 passive Drain of the P-channel MOSFET (Q1), connected internally with pin 6, rated for VDS -40V.
6 D1 passive Drain of the P-channel MOSFET (Q1), connected internally with pin 5, rated for VDS -40V.
7 D2 passive Drain of the N-channel MOSFET (Q2), connected internally with pin 8, rated for VDS 40V.
8 D2 passive Drain of the N-channel MOSFET (Q2), connected internally with pin 7, rated for VDS 40V.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDSS 40 V 2
Drain-Source Voltage (P-channel) VDSS -40 V 2
Gate-Source Voltage (N- and P-channel) VGSS -20 20 V 2
Continuous Drain Current (N-channel) ID 6 A TA=25℃ 2
Continuous Drain Current (P-channel) ID -5 A TA=25℃ 2
Continuous Drain Current (N-channel) ID 5 A TA=70℃ 2
Continuous Drain Current (P-channel) ID -4 A TA=70℃ 2
Pulsed Drain Current (N-channel) IDM 20 A 2
Pulsed Drain Current (P-channel) IDM -20 A 2
Power Dissipation (N- and P-channel) PD 2 W TA=25℃ 2
Power Dissipation (N- and P-channel) PD 1.28 W TA=70℃ 2
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Maximum Junction-to-Ambient (N- and P-channel) RθJA 62.5 ℃/W t≤10s 2
Maximum Junction-to-Ambient (N- and P-channel) RθJA 110 ℃/W Steady-State 2
Maximum Junction-to-Lead (N- and P-channel) RθJL 50 ℃/W Steady-State 2
Drain-Source Breakdown Voltage (N-channel) BVDSS 40 44 V VGS=0V ID=250μA 3
Zero Gate Voltage Drain Current (N-channel) IDSS 1 μA VDS=40V VGS=0V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 5 μA VDS=40V VGS=0V TJ=55℃ 3
Gate-Body Leakage Current (N-channel) IGSS 100 nA VGS=±20V VDS=0V 3
Gate Threshold Voltage (N-channel) VGS(th) 1 1.6 3 V VDS=VGS ID=250μA 3
On-State Drain Current (N-channel) ID(on) 20 A VDS=10V VGS=5.0V 3
Static Drain-Source On-Resistance (N-channel) RDS(on) 17.5 31 mΩ VGS=10V ID=6A 3
Static Drain-Source On-Resistance (N-channel) RDS(on) 22.8 45 mΩ VGS=4.5V ID=5.0A 3
Diode Forward Voltage (N-channel) VSD 0.73 1 V VGS=0V IS=1.0A 3
Drain-Source Breakdown Voltage (P-channel) BVDSS -40 -46 V VGS=0V ID=-250μA 6
Zero Gate Voltage Drain Current (P-channel) IDSS -1 μA VDS=-40V VGS=0V 6
Zero Gate Voltage Drain Current (P-channel) IDSS -5 μA VDS=-40V VGS=0V TJ=55℃ 6
Gate-Body Leakage Current (P-channel) IGSS 100 nA VGS=±20V VDS=0V 6
Gate Threshold Voltage (P-channel) VGS(th) -1 -1.6 -3 V VDS=VGS ID=-250μA 6
On-State Drain Current (P-channel) ID(on) 6 A VDS=-5V VGS=-10V 6
Static Drain-Source On-Resistance (P-channel) RDS(on) 38 45 mΩ VGS=-10V ID=-5.0A 6
Static Drain-Source On-Resistance (P-channel) RDS(on) 49 63 mΩ VGS=-4.5V ID=-2.0A 6
Diode Forward Voltage (P-channel) VSD -0.76 -1 V VGS=0V IS=-1.0A 6

CAD (KiCad official)

  • Symbol: BRCS4614SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs4614sc-etched.step / brcs4614sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs4614sc.step / brcs4614sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (11 pp, sha256 07d96516b9d38a45, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF