component
BS170
Public Made by Adomby adom
onsemi MOSFETs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBS170
onsemi · MOSFETs · TO-92
BS170 from onsemi, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain; rated for 60 V drain-source voltage (VDSS) and 500 mA continuous (1200 mA pulsed) drain current. |
| 2 | G | input | Gate; voltage-controlled input rated for ±20 V gate-source voltage, with gate threshold of 0.8 V min to 3 V max at VDS = VGS, ID = 1 mA. |
| 3 | S | passive | Source; the reference terminal for gate drive, with 60 V maximum drain-source voltage and 500 mA continuous current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Drain-Gate Voltage | VDGR | 60 | V | RGS ≤ 1MΩ | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Drain Current - Continuous | ID | 500 | mA | 2 | |||
| Drain Current - Pulsed (BS170 column) | ID | 1200 | mA | 2 | |||
| Maximum Power Dissipation | PD | 830 | mW | TA = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/16" from case for 10 seconds | 2 | ||
| Thermal Resistance, Junction to Ambient (BS170 column) | RθJA | 150 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 100μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.5 | μA | VDS = 25V, VGS = 0V | 3 | ||
| Gate - Body Leakage, Forward | IGSSF | 10 | nA | VGS = 15V, VDS = 0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 0.8 | 2.1 | 3 | V | VDS = VGS, ID = 1mA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | 1.2 | 5 | Ω | VGS = 10V, ID = 200mA | 3 | |
| Input Capacitance | Ciss | 24 | 40 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Output Capacitance | Coss | 17 | 30 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 7 | 10 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Forward Transconductance (BS170) | gFS | 320 | mS | VDS = 10V, ID = 200mA | 3 | ||
| Turn-On Time (BS170) | ton | 10 | ns | VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25Ω | 3 | ||
| Turn-Off Time (BS170) | toff | 10 | ns | VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25Ω | 3 |
CAD (KiCad official)
- Symbol:
BS170 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
bs170-etched.step/bs170-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bs170.step/bs170.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (16 pp, sha256
3011eb5e950a918e, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).