component

BS170

Public Made by Adom

by adom

onsemi MOSFETs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 21d ago
viewers bs170: viewers · Ray 21d ago
bs170-etched.glb bs170: factory component page (tier=lcsc) · Ray 21d ago
bs170-etched.step bs170: factory component page (tier=lcsc) · Ray 21d ago
bs170-hero.glb bs170: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
bs170-hero.overlay.json Publish 0.1.0 · Ray 21d ago
bs170.glb Publish 0.1.0 · Ray 21d ago
bs170.kicad_mod Publish 0.1.0 · Ray 21d ago
bs170.kicad_sym Publish 0.1.0 · Ray 21d ago
bs170.lbr Publish 0.1.0 · Ray 21d ago
bs170.step Publish 0.1.0 · Ray 21d ago
package.json Publish 0.1.0 · Ray 21d ago
page.json bs170: specified limits as data (metadata.characteristics, 20 rows from the datasheet) · Ray 16d ago
README.md bs170: specified limits as data (metadata.characteristics, 20 rows from the datasheet) · Ray 16d ago

BS170

onsemi · MOSFETs · TO-92

BS170 from onsemi, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain; rated for 60 V drain-source voltage (VDSS) and 500 mA continuous (1200 mA pulsed) drain current.
2 G input Gate; voltage-controlled input rated for ±20 V gate-source voltage, with gate threshold of 0.8 V min to 3 V max at VDS = VGS, ID = 1 mA.
3 S passive Source; the reference terminal for gate drive, with 60 V maximum drain-source voltage and 500 mA continuous current.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Drain-Gate Voltage VDGR 60 V RGS ≤ 1MΩ 2
Gate-Source Voltage VGSS -20 20 V 2
Drain Current - Continuous ID 500 mA 2
Drain Current - Pulsed (BS170 column) ID 1200 mA 2
Maximum Power Dissipation PD 830 mW TA = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/16" from case for 10 seconds 2
Thermal Resistance, Junction to Ambient (BS170 column) RθJA 150 °C/W 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 100μA 3
Zero Gate Voltage Drain Current IDSS 0.5 μA VDS = 25V, VGS = 0V 3
Gate - Body Leakage, Forward IGSSF 10 nA VGS = 15V, VDS = 0V 3
Gate Threshold Voltage VGS(th) 0.8 2.1 3 V VDS = VGS, ID = 1mA 3
Static Drain-Source On-Resistance RDS(ON) 1.2 5 Ω VGS = 10V, ID = 200mA 3
Input Capacitance Ciss 24 40 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Output Capacitance Coss 17 30 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 7 10 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Forward Transconductance (BS170) gFS 320 mS VDS = 10V, ID = 200mA 3
Turn-On Time (BS170) ton 10 ns VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25Ω 3
Turn-Off Time (BS170) toff 10 ns VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25Ω 3

CAD (KiCad official)

  • Symbol: BS170
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: bs170-etched.step / bs170-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bs170.step / bs170.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (16 pp, sha256 3011eb5e950a918e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF