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SI4174DY-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4174DY-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOP-8
SI4174DY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (VDS = 30V rated device), shorted internally with the other source pins. |
| 2 | S | passive | Source of the N-channel MOSFET (VDS = 30V rated device), shorted internally with the other source pins. |
| 3 | S | passive | Source of the N-channel MOSFET (VDS = 30V rated device), shorted internally with the other source pins. |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20V and operation with gate voltages as low as 4.5V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 15 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous (70℃) | ID (70℃) | 8.2 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 42 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 62 | mJ | Note 5 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 36 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.027 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | 9 | mΩ | VGS=10V , ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 14 | mΩ | VGS=4.5V , ID=8A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | -5.8 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Forward Transconductance | gfs | 5.8 | S | VDS=5V , ID=10A | 2 | ||
| Gate Resistance | Rg | 2.2 | 3.8 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | |
| Total Gate Charge (4.5V) | Qg | 12.6 | 17.6 | nC | VDS=15V , VGS=4.5V , ID=10A | 2 | |
| Gate-Source Charge | Qgs | 4.2 | 5.9 | nC | VDS=15V , VGS=4.5V , ID=10A | 2 | |
| Gate-Drain Charge | Qgd | 5.1 | 7.1 | nC | VDS=15V , VGS=4.5V , ID=10A | 2 | |
| Turn-On Delay Time | Td(on) | 6.2 | 12.4 | ns | VDD=15V , VGS=10V , RG=3.3 , ID=10A | 2 | |
| Rise Time | Tr | 59 | 106 | ns | VDD=15V , VGS=10V , RG=3.3 , ID=10A | 2 | |
| Turn-Off Delay Time | Td(off) | 27.6 | 55 | ns | VDD=15V , VGS=10V , RG=3.3 , ID=10A | 2 | |
| Fall Time | Tf | 8.4 | 16.8 | ns | VDD=15V , VGS=10V , RG=3.3 , ID=10A | 2 | |
| Input Capacitance | Ciss | 1317 | 1845 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | |
| Output Capacitance | Coss | 163 | 228.2 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 131 | 183.4 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | |
| Continuous Source Current | IS | 10.3 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 42 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 12.5 | nS | IF=10A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 5 | nC | IF=10A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SI4174DY-T1-GE3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4174dy-t1-ge3-hxy-etched.step/si4174dy-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4174dy-t1-ge3-hxy.step/si4174dy-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
99fc9745d465851a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).