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SI4174DY-T1-GE3-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4174DY-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4174DY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (VDS = 30V rated device), shorted internally with the other source pins.
2 S passive Source of the N-channel MOSFET (VDS = 30V rated device), shorted internally with the other source pins.
3 S passive Source of the N-channel MOSFET (VDS = 30V rated device), shorted internally with the other source pins.
4 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20V and operation with gate voltages as low as 4.5V.
5 D passive Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current.
6 D passive Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current.
7 D passive Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current.
8 D passive Drain of the N-channel MOSFET, rated 30V drain-source with 15A continuous drain current.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 15 A TC=25℃ 1
Drain Current-Continuous (70℃) ID (70℃) 8.2 A TC=70℃ 1
Pulsed Drain Current IDM 42 A TC=25℃ 1
Maximum Power Dissipation PD 1.5 W TC=25℃ 1
Single pulse avalanche energy EAS 62 mJ Note 5 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 36 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.027 V/℃ Reference to 25℃ , ID=1mA 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9 mΩ VGS=10V , ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 11 14 mΩ VGS=4.5V , ID=8A 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.5 V VGS=VDS , ID =250uA 2
VGS(th) Temperature Coefficient △VGS(th) -5.8 mV/℃ 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Forward Transconductance gfs 5.8 S VDS=5V , ID=10A 2
Gate Resistance Rg 2.2 3.8 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 12.6 17.6 nC VDS=15V , VGS=4.5V , ID=10A 2
Gate-Source Charge Qgs 4.2 5.9 nC VDS=15V , VGS=4.5V , ID=10A 2
Gate-Drain Charge Qgd 5.1 7.1 nC VDS=15V , VGS=4.5V , ID=10A 2
Turn-On Delay Time Td(on) 6.2 12.4 ns VDD=15V , VGS=10V , RG=3.3 , ID=10A 2
Rise Time Tr 59 106 ns VDD=15V , VGS=10V , RG=3.3 , ID=10A 2
Turn-Off Delay Time Td(off) 27.6 55 ns VDD=15V , VGS=10V , RG=3.3 , ID=10A 2
Fall Time Tf 8.4 16.8 ns VDD=15V , VGS=10V , RG=3.3 , ID=10A 2
Input Capacitance Ciss 1317 1845 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 163 228.2 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 131 183.4 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 10.3 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 42 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Reverse Recovery Time trr 12.5 nS IF=10A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 5 nC IF=10A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SI4174DY-T1-GE3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4174dy-t1-ge3-hxy-etched.step / si4174dy-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4174dy-t1-ge3-hxy.step / si4174dy-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 99fc9745d465851a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF