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Contents

README

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VBPW34S

Vishay Semiconductors · Photodiodes · SMD, 4.4x3.9mm

VBPW34S from Vishay Semiconductors, in a SMD, 4.4x3.9mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). The symbol is generated from that pin table and the footprint is an Adom_Gen land derived from the manufacturer drawing; the 3D model is generated to fit it.

Pinout

Pin Name Type Function
1 Cathode passive Cathode: the plain 1.6 mm lead (right in the p.4 top view), facing the sprocket holes on the p.6 tape ('CATHODE'). Number by convention; Vishay prints none.
2 Anode passive Anode: the lead necked to 0.8 mm at its tip (left in the p.4 top view).

Key specifications

Parameter Value
Manufacturer Vishay Semiconductors
Package SMD, 4.4x3.9mm
Category Optoelectronics
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 60 V 1
Power dissipation PV 215 mW Tamb ≤ 25 °C 1
Junction temperature Tj 100 °C 1
Operating temperature range Tamb -40 100 °C 1
Storage temperature range Tstg -40 100 °C 1
Soldering temperature Tsd 260 °C Acc. reflow solder profile fig. 8 1
Breakdown voltage V(BR) 60 V IR = 100 μA, E = 0 2
Forward voltage VF 1 1.3 V IF = 50 mA 2
Reverse dark current Iro 2 30 nA VR = 10 V, E = 0 2
Diode capacitance CD 25 40 pF VR = 3 V, f = 1 MHz, E = 0 2
Reverse light current Ira 45 55 μA Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V 2
Angle of half sensitivity ϕ -65 65 deg 2
Range of spectral bandwidth λ0.1 430 1100 nm 2
Diode capacitance CD 70 pF VR = 0 V, f = 1 MHz, E = 0 2
Open circuit voltage Vo 350 mV Ee = 1 mW/cm2, λ = 950 nm 2
Temperature coefficient of Vo TKVo -2.6 mV/K Ee = 1 mW/cm2, λ = 950 nm 2
Short circuit current Ik 50 μA Ee = 1 mW/cm2, λ = 950 nm 2
Temperature coefficient of Ik TKIk 0.1 %/K Ee = 1 mW/cm2, λ = 950 nm 2
Wavelength of peak sensitivity λp 940 nm 2
Noise equivalent power NEP 4e-14 W/√Hz VR = 10 V, λ = 950 nm 2
Rise time tr 100 ns VR = 10 V, RL = 1 kΩ, λ = 820 nm 2
Fall time tf 100 ns VR = 10 V, RL = 1 kΩ, λ = 820 nm 2
Thermal resistance junction/ambient RthJA 350 K/W 1

CAD (Adom-generated)

  • Symbol: VBPW34S
  • Footprint: Adom_Gen:Vishay_Semiconductors_VBPW34_f42b60
  • 3D model: generated to fit the land (STEP)
  • 3D model files: vbpw34s-etched.step / vbpw34s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbpw34s.step / vbpw34s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Semiconductors datasheet (8 pp, sha256 33e4449b278380d4, retrieved 2026-11-10, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: symbol generated from the datasheet pin table; footprint an Adom_Gen land derived from the manufacturer drawing. 3D model generated to fit that land.

Datasheet PDF