component
VBPW34S
Public Made by Adomby adom
Vishay Semiconductors Photodiodes, SMD,4.4x3.9mm. Pinout settled in review by an AI reviewer against the manufacturer's datasheet, KiCad symbol/footprint/3D.
Generated by adom_assets · KiCad file format 20240108
VBPW34S
Vishay Semiconductors · Photodiodes · SMD, 4.4x3.9mm
VBPW34S from Vishay Semiconductors, in a SMD, 4.4x3.9mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). The symbol is generated from that pin table and the footprint is an Adom_Gen land derived from the manufacturer drawing; the 3D model is generated to fit it.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode: the plain 1.6 mm lead (right in the p.4 top view), facing the sprocket holes on the p.6 tape ('CATHODE'). Number by convention; Vishay prints none. |
| 2 | Anode | passive | Anode: the lead necked to 0.8 mm at its tip (left in the p.4 top view). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Semiconductors |
| Package | SMD, 4.4x3.9mm |
| Category | Optoelectronics |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse voltage | VR | 60 | V | 1 | |||
| Power dissipation | PV | 215 | mW | Tamb ≤ 25 °C | 1 | ||
| Junction temperature | Tj | 100 | °C | 1 | |||
| Operating temperature range | Tamb | -40 | 100 | °C | 1 | ||
| Storage temperature range | Tstg | -40 | 100 | °C | 1 | ||
| Soldering temperature | Tsd | 260 | °C | Acc. reflow solder profile fig. 8 | 1 | ||
| Breakdown voltage | V(BR) | 60 | V | IR = 100 μA, E = 0 | 2 | ||
| Forward voltage | VF | 1 | 1.3 | V | IF = 50 mA | 2 | |
| Reverse dark current | Iro | 2 | 30 | nA | VR = 10 V, E = 0 | 2 | |
| Diode capacitance | CD | 25 | 40 | pF | VR = 3 V, f = 1 MHz, E = 0 | 2 | |
| Reverse light current | Ira | 45 | 55 | μA | Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V | 2 | |
| Angle of half sensitivity | ϕ | -65 | 65 | deg | 2 | ||
| Range of spectral bandwidth | λ0.1 | 430 | 1100 | nm | 2 | ||
| Diode capacitance | CD | 70 | pF | VR = 0 V, f = 1 MHz, E = 0 | 2 | ||
| Open circuit voltage | Vo | 350 | mV | Ee = 1 mW/cm2, λ = 950 nm | 2 | ||
| Temperature coefficient of Vo | TKVo | -2.6 | mV/K | Ee = 1 mW/cm2, λ = 950 nm | 2 | ||
| Short circuit current | Ik | 50 | μA | Ee = 1 mW/cm2, λ = 950 nm | 2 | ||
| Temperature coefficient of Ik | TKIk | 0.1 | %/K | Ee = 1 mW/cm2, λ = 950 nm | 2 | ||
| Wavelength of peak sensitivity | λp | 940 | nm | 2 | |||
| Noise equivalent power | NEP | 4e-14 | W/√Hz | VR = 10 V, λ = 950 nm | 2 | ||
| Rise time | tr | 100 | ns | VR = 10 V, RL = 1 kΩ, λ = 820 nm | 2 | ||
| Fall time | tf | 100 | ns | VR = 10 V, RL = 1 kΩ, λ = 820 nm | 2 | ||
| Thermal resistance junction/ambient | RthJA | 350 | K/W | 1 |
CAD (Adom-generated)
- Symbol:
VBPW34S - Footprint:
Adom_Gen:Vishay_Semiconductors_VBPW34_f42b60 - 3D model: generated to fit the land (STEP)
- 3D model files:
vbpw34s-etched.step/vbpw34s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbpw34s.step/vbpw34s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Semiconductors datasheet (8 pp, sha256
33e4449b278380d4, retrieved 2026-11-10, tier: manufacturer) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: symbol generated from the datasheet pin table; footprint an Adom_Gen land derived from the manufacturer drawing. 3D model generated to fit that land.