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AO4482
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4482
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4482 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source; pin 1 is on the S-S-S-G side of the SO8 top view, with VDS rating of 100V between drain and source. |
| 2 | S | passive | Source; second of three source pins, tied to the same source terminal as pins 1 and 3. |
| 3 | S | passive | Source; third of three source pins, tied to the same source terminal as pins 1 and 2. |
| 4 | G | input | Gate; gate-source voltage is rated ±20V maximum, with RDS(ON) specified at VGS=10V and 4.5V. |
| 5 | D | passive | Drain; one of four drain pins, 100V maximum drain-source voltage and 6A continuous at TA=25°C. |
| 6 | D | passive | Drain; one of four drain pins tied together, 100V maximum drain-source voltage. |
| 7 | D | passive | Drain; one of four drain pins tied together, 100V maximum drain-source voltage. |
| 8 | D | passive | Drain; one of four drain pins tied together, 100V maximum drain-source voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Continuous Drain Current | ID | 6 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 42 | A | 1 | |||
| Avalanche Current | IAS, IAR | 35 | A | 1 | |||
| Avalanche energy | EAS, EAR | 61 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Maximum Junction-to-Ambient, t ≤ 10s | RθJA | 31 | 40 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient, Steady-State | RθJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead, Steady-State | RθJL | 16 | 24 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=100V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=±20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.6 | 2.1 | 2.7 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 42 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 37 | mΩ | VGS=10V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 60 | 72 | mΩ | VGS=10V, ID=6A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 42 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Input Capacitance | Ciss | 1300 | 1630 | 2000 | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Output Capacitance | Coss | 70 | 100 | 130 | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 30 | 50 | 70 | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Gate resistance | Rg | 0.3 | 0.75 | 1.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg (10V) | 28 | 36 | 44 | nC | VGS=10V, VDS=50V, ID=6A | 2 |
| Total Gate Charge | Qg (4.5V) | 14 | 18 | 22 | nC | 2 | |
| Gate Source Charge | Qgs | 4 | 5 | 6 | nC | 2 | |
| Gate Drain Charge | Qgd | 5 | 9 | 13 | nC | 2 | |
| Turn-On Delay Time | tD(on) | 7 | ns | VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 7 | ns | VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 28 | ns | VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 7 | ns | VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 17.5 | 25 | 33 | ns | IF=6A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 90 | 130 | 170 | nC | IF=6A, dI/dt=500A/µs | 2 |
| Forward Transconductance | gFS | 35 | S | VDS=5V, ID=6A | 2 |
CAD (KiCad official)
- Symbol:
AO4482 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4482-etched.step/ao4482-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4482.step/ao4482.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
f95958a9d14f6165, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).