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AO4482

Public Made by Adom

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Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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ao4482-hero.glb ao4482: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
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package.json Publish 0.1.0 · Ray 21d ago
page.json ao4482: specified limits as data (metadata.characteristics, 39 rows from the datasheet) · Ray 16d ago
README.md ao4482: specified limits as data (metadata.characteristics, 39 rows from the datasheet) · Ray 16d ago

AO4482

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4482 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source; pin 1 is on the S-S-S-G side of the SO8 top view, with VDS rating of 100V between drain and source.
2 S passive Source; second of three source pins, tied to the same source terminal as pins 1 and 3.
3 S passive Source; third of three source pins, tied to the same source terminal as pins 1 and 2.
4 G input Gate; gate-source voltage is rated ±20V maximum, with RDS(ON) specified at VGS=10V and 4.5V.
5 D passive Drain; one of four drain pins, 100V maximum drain-source voltage and 6A continuous at TA=25°C.
6 D passive Drain; one of four drain pins tied together, 100V maximum drain-source voltage.
7 D passive Drain; one of four drain pins tied together, 100V maximum drain-source voltage.
8 D passive Drain; one of four drain pins tied together, 100V maximum drain-source voltage.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TA=25°C unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA=25°C unless otherwise noted 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Continuous Drain Current ID 6 A TA=25°C 1
Continuous Drain Current ID 5 A TA=70°C 1
Pulsed Drain Current IDM 42 A 1
Avalanche Current IAS, IAR 35 A 1
Avalanche energy EAS, EAR 61 mJ L=0.1mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Maximum Junction-to-Ambient, t ≤ 10s RθJA 31 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient, Steady-State RθJA 59 75 °C/W Steady-State 1
Maximum Junction-to-Lead, Steady-State RθJL 16 24 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 100 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=100V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=100V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.6 2.1 2.7 V VDS=VGS, ID=250µA 2
On state drain current ID(ON) 42 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 30 37 mΩ VGS=10V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 60 72 mΩ VGS=10V, ID=6A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 33 42 mΩ VGS=4.5V, ID=5A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 4 A 2
Input Capacitance Ciss 1300 1630 2000 pF VGS=0V, VDS=50V, f=1MHz 2
Output Capacitance Coss 70 100 130 pF VGS=0V, VDS=50V, f=1MHz 2
Reverse Transfer Capacitance Crss 30 50 70 pF VGS=0V, VDS=50V, f=1MHz 2
Gate resistance Rg 0.3 0.75 1.1 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg (10V) 28 36 44 nC VGS=10V, VDS=50V, ID=6A 2
Total Gate Charge Qg (4.5V) 14 18 22 nC 2
Gate Source Charge Qgs 4 5 6 nC 2
Gate Drain Charge Qgd 5 9 13 nC 2
Turn-On Delay Time tD(on) 7 ns VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω 2
Turn-On Rise Time tr 7 ns VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω 2
Turn-Off Delay Time tD(off) 28 ns VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 7 ns VGS=10V, VDS=50V, RL=8.3Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 17.5 25 33 ns IF=6A, dI/dt=500A/µs 2
Body Diode Reverse Recovery Charge Qrr 90 130 170 nC IF=6A, dI/dt=500A/µs 2
Forward Transconductance gFS 35 S VDS=5V, ID=6A 2

CAD (KiCad official)

  • Symbol: AO4482
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4482-etched.step / ao4482-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4482.step / ao4482.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 f95958a9d14f6165, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF