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Contents

README

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DON20P10

DOINGTER · MOSFETs · DFN5x6-8

DON20P10 from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pin 1, marked S1 in the bottom-view drawing); VDS rating -100V, ID -20A.
2 S passive Source of the P-channel MOSFET, tied to the other source pins.
3 S passive Source of the P-channel MOSFET, tied to the other source pins.
4 G input Gate; VGS absolute maximum ±20V, threshold -1V to -2.5V at ID=250μA.
5 D passive Drain of the P-channel MOSFET, tied to the other drain pins; VDS maximum -100V.
6 D passive Drain of the P-channel MOSFET, tied to the other drain pins.
7 D passive Drain of the P-channel MOSFET, tied to the other drain pins.
8 D passive Drain of the P-channel MOSFET, tied to the other drain pins; continuous drain current -20A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer DOINGTER
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID -20 A TC=25℃ 1
Continuous Drain Current ID -14 A TC=100℃ 1
Pulsed Drain Current IDM -80 A Repetitive rating: pulse width limited by maximum junction temperature (note 1) 1
Power Dissipation PD 62.5 W TC=25℃ 1
Single pulse avalanche energy EAS 72 mJ TJ=25℃, VDD=-50V, VG=-10V, RG=25Ω, L=0.5mH (note 2) 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RθJC 2 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-100V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1 -1.9 -2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 80 100 mΩ VGS=-10V, ID=-3A 2
Drain-Source On Resistance RDS(ON) 90 120 mΩ VGS=-4.5V, ID=-2A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, ISD=-4A 2
Continuous Drain Current (body diode) IS -20 A VD=VG=0V 2
Pulsed Drain Current (body diode) ISM -80 A 2

CAD (KiCad official)

  • Symbol: DON20P10
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: don20p10-etched.step / don20p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); don20p10.step / don20p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 182c68f271b77049, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF