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DON20P10
Public Made by Adomby adom
DOINGTER MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDON20P10
DOINGTER · MOSFETs · DFN5x6-8
DON20P10 from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (pin 1, marked S1 in the bottom-view drawing); VDS rating -100V, ID -20A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the other source pins. |
| 4 | G | input | Gate; VGS absolute maximum ±20V, threshold -1V to -2.5V at ID=250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDS maximum -100V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; continuous drain current -20A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | -20 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -14 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -80 | A | Repetitive rating: pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Power Dissipation | PD | 62.5 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 72 | mJ | TJ=25℃, VDD=-50V, VG=-10V, RG=25Ω, L=0.5mH (note 2) | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-100V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.9 | -2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 80 | 100 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 90 | 120 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, ISD=-4A | 2 | ||
| Continuous Drain Current (body diode) | IS | -20 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (body diode) | ISM | -80 | A | 2 |
CAD (KiCad official)
- Symbol:
DON20P10 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
don20p10-etched.step/don20p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);don20p10.step/don20p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
182c68f271b77049, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).