component
NVR4003NT3G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNVR4003NT3G
onsemi · MOSFETs · SOT-23
NVR4003NT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | ESD-protected gate with a gate-to-source voltage rating of ±20 V (VGS) and a gate threshold voltage VGS(TH) of 0.8 V min, 1.4 V typ. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; the body-diode source current IS is rated at 1.0 A. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-to-source voltage VDSS is 30 V and continuous drain current ID is 0.56 A (t < 10 s, TA = 25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (steady state) | ID | 0.5 | A | Steady State, TA = 25°C | 1 | ||
| Continuous Drain Current (steady state) | ID | 0.37 | A | Steady State, TA = 85°C | 1 | ||
| Power Dissipation (steady state) | PD | 0.69 | W | Steady State | 1 | ||
| Continuous Drain Current | ID | 0.56 | A | t < 10 s, TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 0.4 | A | t < 10 s, TA = 85°C | 1 | ||
| Power Dissipation | PD | 0.83 | W | t < 5 s | 1 | ||
| Pulsed Drain Current | IDM | 1.7 | A | tp = 10 s | 1 | ||
| Source Current (Body Diode) | IS | 1 | A | 1 | |||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient Thermal Resistance (steady state) | RJA | 180 | °C/W | Steady State; surface-mounted on FR4, 1 in sq pad (Note 1) | 2 | ||
| Junction-to-Ambient Thermal Resistance (t < 10 s) | RJA | 150 | °C/W | t < 10 s; surface-mounted on FR4, 1 in sq pad (Note 1) | 2 | ||
| Junction-to-Ambient Thermal Resistance (steady state) | RJA | 300 | °C/W | Steady State; surface-mounted on FR4, minimum recommended pad (Note 2) | 2 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0 V, ID = 100 A | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VGS = 0 V, VDS = 30 V, TJ = 25°C | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -1 | 1 | A | VDS = 0 V, VGS = ±10 V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1.4 | V | VGS = VDS, ID = 250 A | 3 | |
| Drain-to-Source On Resistance | RDS(on) | 1 | 1.5 | Ω | VGS = 4.0 V, ID = 10 mA | 3 | |
| Drain-to-Source On Resistance | RDS(on) | 1.5 | 2 | Ω | VGS = 2.5 V, ID = 10 mA | 3 | |
| Input Capacitance | Ciss | 21 | 42 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 3 | |
| Output Capacitance | Coss | 19.7 | 40 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 3 | |
| Reverse Transfer Capacitance | Crss | 8.1 | 16 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 3 | |
| Forward Diode Voltage | VSD | 0.65 | 0.7 | V | VGS = 0 V, IS = 10 mA, TJ = 25°C | 3 | |
| Zero Gate Voltage Drain Current Temperature Coefficient (V(BR)DSS) | V(BR)DSS/TJ | 40 | mV/°C | 3 | |||
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | 3.4 | mV/°C | 3 | |||
| Forward Transconductance | gFS | 0.33 | S | VDS = 3.0 V, ID = 10 mA | 3 | ||
| Total Gate Charge | QG(TOT) | 1.15 | nC | VGS = 5.0 V, VDS = 24 V, ID = 0.1 A | 3 | ||
| Threshold Gate Charge | QG(TH) | 0.15 | nC | VGS = 5.0 V, VDS = 24 V, ID = 0.1 A | 3 | ||
| Gate-to-Source Gate Charge | QGS | 0.32 | nC | VGS = 5.0 V, VDS = 24 V, ID = 0.1 A | 3 | ||
| Gate-to-Drain Charge | QGD | 0.23 | nC | VGS = 5.0 V, VDS = 24 V, ID = 0.1 A | 3 | ||
| Turn-On Delay Time | td(on) | 16.7 | ns | VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 | 3 | ||
| Rise Time | tr | 47.9 | ns | VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 | 3 | ||
| Turn-Off Delay Time | td(off) | 65.1 | ns | VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 | 3 | ||
| Fall Time | tf | 64.2 | ns | VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 | 3 | ||
| Forward Diode Voltage | VSD | 0.45 | V | VGS = 0 V, IS = 10 mA, TJ = 125°C | 3 | ||
| Reverse Recovery Time | tRR | 14 | ns | VGS = 0 V, dIS/dt = 8A/s, IS = 10 mA | 3 |
CAD (KiCad official)
- Symbol:
NVR4003NT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nvr4003nt3g-etched.step/nvr4003nt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvr4003nt3g.step/nvr4003nt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
e18f8cc897667ae2, retrieved 2026-10-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).