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NVR4003NT3G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NVR4003NT3G

onsemi · MOSFETs · SOT-23

NVR4003NT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input ESD-protected gate with a gate-to-source voltage rating of ±20 V (VGS) and a gate threshold voltage VGS(TH) of 0.8 V min, 1.4 V typ.
2 Source passive Source terminal of the N-channel MOSFET; the body-diode source current IS is rated at 1.0 A.
3 Drain passive Drain terminal of the N-channel MOSFET; drain-to-source voltage VDSS is 30 V and continuous drain current ID is 0.56 A (t < 10 s, TA = 25°C).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (steady state) ID 0.5 A Steady State, TA = 25°C 1
Continuous Drain Current (steady state) ID 0.37 A Steady State, TA = 85°C 1
Power Dissipation (steady state) PD 0.69 W Steady State 1
Continuous Drain Current ID 0.56 A t < 10 s, TA = 25°C 1
Continuous Drain Current ID 0.4 A t < 10 s, TA = 85°C 1
Power Dissipation PD 0.83 W t < 5 s 1
Pulsed Drain Current IDM 1.7 A tp = 10 s 1
Source Current (Body Diode) IS 1 A 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Thermal Resistance (steady state) RJA 180 °C/W Steady State; surface-mounted on FR4, 1 in sq pad (Note 1) 2
Junction-to-Ambient Thermal Resistance (t < 10 s) RJA 150 °C/W t < 10 s; surface-mounted on FR4, 1 in sq pad (Note 1) 2
Junction-to-Ambient Thermal Resistance (steady state) RJA 300 °C/W Steady State; surface-mounted on FR4, minimum recommended pad (Note 2) 2
Drain-to-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0 V, ID = 100 A 3
Zero Gate Voltage Drain Current IDSS 1 A VGS = 0 V, VDS = 30 V, TJ = 25°C 3
Gate-to-Source Leakage Current IGSS -1 1 A VDS = 0 V, VGS = ±10 V 3
Gate Threshold Voltage VGS(TH) 0.8 1.4 V VGS = VDS, ID = 250 A 3
Drain-to-Source On Resistance RDS(on) 1 1.5 Ω VGS = 4.0 V, ID = 10 mA 3
Drain-to-Source On Resistance RDS(on) 1.5 2 Ω VGS = 2.5 V, ID = 10 mA 3
Input Capacitance Ciss 21 42 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 3
Output Capacitance Coss 19.7 40 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 3
Reverse Transfer Capacitance Crss 8.1 16 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 3
Forward Diode Voltage VSD 0.65 0.7 V VGS = 0 V, IS = 10 mA, TJ = 25°C 3
Zero Gate Voltage Drain Current Temperature Coefficient (V(BR)DSS) V(BR)DSS/TJ 40 mV/°C 3
Negative Threshold Temperature Coefficient VGS(TH)/TJ 3.4 mV/°C 3
Forward Transconductance gFS 0.33 S VDS = 3.0 V, ID = 10 mA 3
Total Gate Charge QG(TOT) 1.15 nC VGS = 5.0 V, VDS = 24 V, ID = 0.1 A 3
Threshold Gate Charge QG(TH) 0.15 nC VGS = 5.0 V, VDS = 24 V, ID = 0.1 A 3
Gate-to-Source Gate Charge QGS 0.32 nC VGS = 5.0 V, VDS = 24 V, ID = 0.1 A 3
Gate-to-Drain Charge QGD 0.23 nC VGS = 5.0 V, VDS = 24 V, ID = 0.1 A 3
Turn-On Delay Time td(on) 16.7 ns VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 3
Rise Time tr 47.9 ns VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 3
Turn-Off Delay Time td(off) 65.1 ns VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 3
Fall Time tf 64.2 ns VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 3
Forward Diode Voltage VSD 0.45 V VGS = 0 V, IS = 10 mA, TJ = 125°C 3
Reverse Recovery Time tRR 14 ns VGS = 0 V, dIS/dt = 8A/s, IS = 10 mA 3

CAD (KiCad official)

  • Symbol: NVR4003NT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nvr4003nt3g-etched.step / nvr4003nt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nvr4003nt3g.step / nvr4003nt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 e18f8cc897667ae2, retrieved 2026-10-24, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF