component
AFGY160T65SPD-B4
Public Made by Adomby adom
onsemi IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAFGY160T65SPD-B4
onsemi · IGBTs · TO-247-3
AFGY160T65SPD-B4 from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate drive input of the IGBT, rated ±20 V (±30 V transient) gate-to-emitter, with VGE(th) of 4.3 V to 6.3 V at Ic = 160 mA. |
| 2 | C | passive | Collector (also the case/tab side of the copacked diode cathode), rated 650 V VCES and 240 A at TC = 25°C (limited to bondwire). |
| 3 | E | passive | Emitter, common return of the IGBT and the copacked diode anode, with pulsed collector current up to 480 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | 650 | V | 2 | |||
| Gate to Emitter Voltage | VGES | -20 | 20 | V | 2 | ||
| Transient Gate to Emitter Voltage | VGES transient | -30 | 30 | V | 2 | ||
| Collector Current | IC | 240 | A | TC = 25°C (Note 1) | 2 | ||
| Collector Current | IC | 220 | A | TC = 100°C | 2 | ||
| Nominal Current | INominal | 160 | A | 2 | |||
| Pulsed Collector Current | ICM | 480 | A | 2 | |||
| Diode Forward Current | IFM | 240 | A | TC = 25°C (Note 1) | 2 | ||
| Diode Forward Current | IFM | 188 | A | TC = 100°C | 2 | ||
| Maximum Power Dissipation | PD | 882 | W | TC = 25°C | 2 | ||
| Maximum Power Dissipation | PD | 441 | W | TC = 100°C | 2 | ||
| Short Circuit Withstand Time | SCWT | 6 | s | TC = 25°C | 2 | ||
| Voltage Transient Ruggedness | V/t | 10 | V/ns | VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load (Note 2) | 2 | ||
| Operating Junction Temperature | TJ | -55 | 175 | °C | 2 | ||
| Storage Temperature Range | Tstg | -55 | 175 | °C | 2 | ||
| Maximum Lead Temp. for soldering Purposes | TL | 300 | °C | 1/8 in from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction to Case (IGBT) | RJC (IGBT) | 0.17 | °C/W | 2 | |||
| Thermal Resistance, Junction to Case (Diode) | RJC (Diode) | 0.32 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RJA | 40 | °C/W | 2 | |||
| Collector to Emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA | 3 | ||
| Collector Cut-Off Current | ICES | 40 | A | VCE = VCES, VGE = 0 V | 3 | ||
| G-E Leakage Current | IGES | -250 | 250 | nA | VGE = VGES, VCE = 0 V | 3 | |
| G-E Threshold | VGE(th) | 4.3 | 5.3 | 6.3 | V | Ic = 160 mA; VCE = VGE | 3 |
| Collector to Emitter Saturation Voltage | VCE(sat) | 1.6 | 2.05 | V | Ic = 160 A; VGE = 15 V | 3 | |
| G-E Threshold (Bin A) | VGE(th)A | 5.15 | 5.5 | 6.3 | V | Ic = 160 mA; VCE = VGE | 3 |
| Collector to Emitter Saturation Voltage (Bin A) | VCE(sat)A | 1.5 | 1.6 | 1.67 | V | Ic = 160 A; VGE = 15 V | 3 |
| G-E Threshold (Bin B) | VGE(th)B | 5.15 | 5.5 | 6.3 | V | Ic = 160 mA; VCE = VGE | 3 |
| Collector to Emitter Saturation Voltage (Bin B) | VCE(sat)B | 1.57 | 1.64 | 2.05 | V | Ic = 160 A; VGE = 15 V | 3 |
| G-E Threshold (Bin C) | VGE(th)C | 4.3 | 5.3 | 5.65 | V | Ic = 160 mA; VCE = VGE | 3 |
| Collector to Emitter Saturation Voltage (Bin C) | VCE(sat)C | 1.5 | 1.6 | 1.67 | V | Ic = 160 A; VGE = 15 V | 3 |
| G-E Threshold (Bin D) | VGE(th)D | 4.3 | 5.3 | 5.65 | V | Ic = 160 mA; VCE = VGE | 3 |
| Collector to Emitter Saturation Voltage (Bin D) | VCE(sat)D | 1.57 | 1.64 | 2.05 | V | Ic = 160 A; VGE = 15 V | 3 |
| Total Gate Charge | Qg | 163 | 245 | nC | VCE = 400 V, IC = 160 A, VGE = 15 V | 4 | |
| Diode Forward Voltage | VFM | 1.4 | 1.7 | V | IF = 160 A, TJ = 25°C | 4 |
CAD (KiCad official)
- Symbol:
AFGY160T65SPD-B4 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
afgy160t65spd-b4-etched.step/afgy160t65spd-b4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);afgy160t65spd-b4.step/afgy160t65spd-b4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (11 pp, sha256
ba572981cbcdac3b, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).