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AFGY160T65SPD-B4

onsemi · IGBTs · TO-247-3

AFGY160T65SPD-B4 from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate drive input of the IGBT, rated ±20 V (±30 V transient) gate-to-emitter, with VGE(th) of 4.3 V to 6.3 V at Ic = 160 mA.
2 C passive Collector (also the case/tab side of the copacked diode cathode), rated 650 V VCES and 240 A at TC = 25°C (limited to bondwire).
3 E passive Emitter, common return of the IGBT and the copacked diode anode, with pulsed collector current up to 480 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Emitter Voltage VCES 650 V 2
Gate to Emitter Voltage VGES -20 20 V 2
Transient Gate to Emitter Voltage VGES transient -30 30 V 2
Collector Current IC 240 A TC = 25°C (Note 1) 2
Collector Current IC 220 A TC = 100°C 2
Nominal Current INominal 160 A 2
Pulsed Collector Current ICM 480 A 2
Diode Forward Current IFM 240 A TC = 25°C (Note 1) 2
Diode Forward Current IFM 188 A TC = 100°C 2
Maximum Power Dissipation PD 882 W TC = 25°C 2
Maximum Power Dissipation PD 441 W TC = 100°C 2
Short Circuit Withstand Time SCWT 6 s TC = 25°C 2
Voltage Transient Ruggedness V/t 10 V/ns VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load (Note 2) 2
Operating Junction Temperature TJ -55 175 °C 2
Storage Temperature Range Tstg -55 175 °C 2
Maximum Lead Temp. for soldering Purposes TL 300 °C 1/8 in from case for 5 seconds 2
Thermal Resistance, Junction to Case (IGBT) RJC (IGBT) 0.17 °C/W 2
Thermal Resistance, Junction to Case (Diode) RJC (Diode) 0.32 °C/W 2
Thermal Resistance, Junction to Ambient RJA 40 °C/W 2
Collector to Emitter Breakdown Voltage BVCES 650 V VGE = 0 V, IC = 1 mA 3
Collector Cut-Off Current ICES 40 A VCE = VCES, VGE = 0 V 3
G-E Leakage Current IGES -250 250 nA VGE = VGES, VCE = 0 V 3
G-E Threshold VGE(th) 4.3 5.3 6.3 V Ic = 160 mA; VCE = VGE 3
Collector to Emitter Saturation Voltage VCE(sat) 1.6 2.05 V Ic = 160 A; VGE = 15 V 3
G-E Threshold (Bin A) VGE(th)A 5.15 5.5 6.3 V Ic = 160 mA; VCE = VGE 3
Collector to Emitter Saturation Voltage (Bin A) VCE(sat)A 1.5 1.6 1.67 V Ic = 160 A; VGE = 15 V 3
G-E Threshold (Bin B) VGE(th)B 5.15 5.5 6.3 V Ic = 160 mA; VCE = VGE 3
Collector to Emitter Saturation Voltage (Bin B) VCE(sat)B 1.57 1.64 2.05 V Ic = 160 A; VGE = 15 V 3
G-E Threshold (Bin C) VGE(th)C 4.3 5.3 5.65 V Ic = 160 mA; VCE = VGE 3
Collector to Emitter Saturation Voltage (Bin C) VCE(sat)C 1.5 1.6 1.67 V Ic = 160 A; VGE = 15 V 3
G-E Threshold (Bin D) VGE(th)D 4.3 5.3 5.65 V Ic = 160 mA; VCE = VGE 3
Collector to Emitter Saturation Voltage (Bin D) VCE(sat)D 1.57 1.64 2.05 V Ic = 160 A; VGE = 15 V 3
Total Gate Charge Qg 163 245 nC VCE = 400 V, IC = 160 A, VGE = 15 V 4
Diode Forward Voltage VFM 1.4 1.7 V IF = 160 A, TJ = 25°C 4

CAD (KiCad official)

  • Symbol: AFGY160T65SPD-B4
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: afgy160t65spd-b4-etched.step / afgy160t65spd-b4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); afgy160t65spd-b4.step / afgy160t65spd-b4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 ba572981cbcdac3b, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF