main
Ray Set visibility: public 6605472 3d ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "afgy160t65spd-b4",
  "title": "AFGY160T65SPD-B4",
  "brief": "onsemi IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors",
    "afgy160t65spd-b4",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "AFGY160T65SPD-B4",
    "manufacturer": "onsemi",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Transistors",
    "subcategory": "IGBTs",
    "datasheet": "https://www.onsemi.com/pdf/datasheet/afgy160t65spd-b4-d.pdf",
    "parts": {
      "symbol": "afgy160t65spd-b4.kicad_sym",
      "footprint": "afgy160t65spd-b4.kicad_mod",
      "model_3d": "afgy160t65spd-b4-hero.glb",
      "model_3d_plain": "afgy160t65spd-b4-etched.glb",
      "model_3d_step": "afgy160t65spd-b4-etched.step",
      "model_3d_step_plain": "afgy160t65spd-b4.step",
      "lbr": "afgy160t65spd-b4.lbr"
    },
    "distributor_links": {
      "lcsc": "C906605",
      "digikey": "488-AFGY160T65SPD-B4-ND",
      "mouser": "863-AFGY160T65SPD-B4"
    },
    "distributor_check": {
      "checked_at": "2026-10-31T04:12:27Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "488-AFGY160T65SPD-B4-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "863-AFGY160T65SPD-B4",
        "status": "found"
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    },
    "pins": [
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        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate drive input of the IGBT, rated ±20 V (±30 V transient) gate-to-emitter, with VGE(th) of 4.3 V to 6.3 V at Ic = 160 mA."
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      {
        "number": "2",
        "name": "C",
        "type": "passive",
        "description": "Collector (also the case/tab side of the copacked diode cathode), rated 650 V VCES and 240 A at TC = 25°C (limited to bondwire)."
      },
      {
        "number": "3",
        "name": "E",
        "type": "passive",
        "description": "Emitter, common return of the IGBT and the copacked diode anode, with pulsed collector current up to 480 A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Page 1 shows the order G, C, E on the leads, and the package drawing labels leads 1 and 3 at the end",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 11,
        "cost_usd": 0.1507,
        "at": "2026-10-31T04:12:11"
      },
      "datasheet": {
        "url": "https://www.onsemi.com/pdf/datasheet/afgy160t65spd-b4-d.pdf",
        "pages": 11,
        "sha256": "ba572981cbcdac3b",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
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        "up": "Z",
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        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
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      "Manufacturer": "onsemi",
      "Package": "TO-247-3",
      "Category": "Transistors",
      "Pins": "3"
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          "name": "Maximum Power Dissipation",
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          "unit": "W",
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          "conditions": "TC = 100°C",
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        {
          "name": "Short Circuit Withstand Time",
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          "max": 6,
          "conditions": "TC = 25°C",
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          "source": "datasheet"
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        {
          "name": "Voltage Transient Ruggedness",
          "symbol": "V/t",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
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          "max": 10,
          "conditions": "VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load (Note 2)",
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        {
          "name": "Operating Junction Temperature",
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        {
          "name": "Storage Temperature Range",
          "symbol": "Tstg",
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          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Maximum Lead Temp. for soldering Purposes",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "1/8 in from case for 5 seconds",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction to Case (IGBT)",
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          "kind": "thermal",
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          "name": "Thermal Resistance, Junction to Case (Diode)",
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          "name": "Collector to Emitter Breakdown Voltage",
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          "name": "Collector Cut-Off Current",
          "symbol": "ICES",
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          "min": null,
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          "conditions": "VCE = VCES, VGE = 0 V",
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          "source": "datasheet"
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          "name": "G-E Leakage Current",
          "symbol": "IGES",
          "kind": "electrical",
          "unit": "nA",
          "min": -250,
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          "max": 250,
          "conditions": "VGE = VGES, VCE = 0 V",
          "source_page": 3,
          "source": "datasheet"
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          "name": "G-E Threshold",
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          "max": 6.3,
          "conditions": "Ic = 160 mA; VCE = VGE",
          "source_page": 3,
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          "name": "Collector to Emitter Saturation Voltage",
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          "typ": 1.6,
          "max": 2.05,
          "conditions": "Ic = 160 A; VGE = 15 V",
          "source_page": 3,
          "source": "datasheet"
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        {
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          "min": 5.15,
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          "max": 6.3,
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          "source_page": 3,
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          "min": 1.5,
          "typ": 1.6,
          "max": 1.67,
          "conditions": "Ic = 160 A; VGE = 15 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "G-E Threshold (Bin B)",
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          "kind": "electrical",
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          "min": 5.15,
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          "source_page": 3,
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          "source_page": 3,
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          "source_page": 3,
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          "name": "Total Gate Charge",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 163,
          "max": 245,
          "conditions": "VCE = 400 V, IC = 160 A, VGE = 15 V",
          "source_page": 4,
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          "name": "Diode Forward Voltage",
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          "kind": "electrical",
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          "min": null,
          "typ": 1.4,
          "max": 1.7,
          "conditions": "IF = 160 A, TJ = 25°C",
          "source_page": 4,
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      ]
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  },
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  "discovery_triggers": [
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  "discovery_pitch": "AFGY160T65SPD-B4 (onsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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