component
FDS6673BZ
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS6673BZ
onsemi · MOSFETs · SO-8
FDS6673BZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3 and to the body diode and gate ESD protection diode. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET with VGS rating of ±25V and a gate-to-source ESD protection diode (HBM 6.5kV typical), which gives no gate overvoltage rating. |
| 5 | D | passive | Drain of the P-channel MOSFET (-30V VDS max, -14.5A continuous), tied to pins 6, 7 and 8. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | -30 | V | ID = -250 µA, VGS = 0V | 2 | ||
| Gate to Source Leakage Current | IGSS | -10 | 10 | µA | VGS = ±25V, VDS = 0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -24V, VGS = 0V | 2 | ||
| Gate to Source Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VGS = VDS, ID = -250 µA | 2 |
| Drain to Source On Resistance | rDS(on) | 6.5 | 7.8 | mΩ | VGS = -10V, ID = -14.5A | 2 | |
| Drain to Source On Resistance | rDS(on) | 9.6 | 12 | mΩ | VGS = -4.5V, ID = -12A | 2 | |
| Drain to Source On Resistance | rDS(on) | 9.7 | 12 | mΩ | VGS = -10V, ID = -14.5A, TJ = 125°C | 2 | |
| Input Capacitance | Ciss | 3500 | 4700 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | |
| Output Capacitance | Coss | 600 | 800 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 600 | 900 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | |
| Rise Time | tr | 16 | 29 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGS = 6Ω | 2 | |
| Fall Time | tf | 105 | 167 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGS = 6Ω | 2 | |
| Total Gate Charge | Qg | 88 | 124 | nC | VDS = -15V, VGS = -10V, ID = -14.5A | 2 | |
| Total Gate Charge | Qg | 46 | 65 | nC | VDS = -15V, VGS = -5V, ID = -14.5A | 2 | |
| Source to Drain Diode Forward Voltage | VSD | -0.7 | -1.2 | V | VGS = 0V, IS = -2.1A | 2 | |
| Drain to Source Voltage | VDS | -30 | V | 1 | |||
| Gate to Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Drain Current Continuous | ID | -14.5 | A | Note 1a | 1 | ||
| Drain Current Pulsed | ID | -75 | A | Pulsed | 1 | ||
| Power Dissipation for Single Operation | PD | 2.5 | W | Note 1a | 1 | ||
| Power Dissipation for Single Operation | PD | 1.2 | W | Note 1b | 1 | ||
| Power Dissipation for Single Operation | PD | 1 | W | Note 1c | 1 | ||
| Operating and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | -20 | mV/°C | ID = -250 µA, referenced to 25°C | 2 | ||
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | 8.1 | mV/°C | ID = -250 µA, referenced to 25°C | 2 | ||
| Forward Transconductance | gFS | 60 | S | VDS = -5V, ID = -14.5A | 2 | ||
| Gate to Source Gate Charge | Qgs | 8 | nC | 2 | |||
| Gate to Drain Charge | Qgd | 23.5 | nC | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W | Note 1a: 1 in² pad of 2 oz copper, 10 sec | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 105 | °C/W | Note 1b: 0.04 in² pad of 2 oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | °C/W | Note 1c: minimum pad | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 25 | °C/W | Note 1 | 1 |
CAD (KiCad official)
- Symbol:
FDS6673BZ - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds6673bz-etched.step/fds6673bz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds6673bz.step/fds6673bz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
f779e499463b7503, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).