component

FDS6673BZ

Public Made by Adom

by adom

onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS6673BZ

onsemi · MOSFETs · SO-8

FDS6673BZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied to pins 2 and 3 and to the body diode and gate ESD protection diode.
2 S passive Source of the P-channel MOSFET, tied to pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to pins 1 and 2.
4 G input Gate of the P-channel MOSFET with VGS rating of ±25V and a gate-to-source ESD protection diode (HBM 6.5kV typical), which gives no gate overvoltage rating.
5 D passive Drain of the P-channel MOSFET (-30V VDS max, -14.5A continuous), tied to pins 6, 7 and 8.
6 D passive Drain of the P-channel MOSFET, tied to pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied to pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied to pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer onsemi
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage BVDSS -30 V ID = -250 µA, VGS = 0V 2
Gate to Source Leakage Current IGSS -10 10 µA VGS = ±25V, VDS = 0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -24V, VGS = 0V 2
Gate to Source Threshold Voltage VGS(th) -1 -1.9 -3 V VGS = VDS, ID = -250 µA 2
Drain to Source On Resistance rDS(on) 6.5 7.8 mΩ VGS = -10V, ID = -14.5A 2
Drain to Source On Resistance rDS(on) 9.6 12 mΩ VGS = -4.5V, ID = -12A 2
Drain to Source On Resistance rDS(on) 9.7 12 mΩ VGS = -10V, ID = -14.5A, TJ = 125°C 2
Input Capacitance Ciss 3500 4700 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 600 800 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 600 900 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Rise Time tr 16 29 ns VDD = -15V, ID = -1A, VGS = -10V, RGS = 6Ω 2
Fall Time tf 105 167 ns VDD = -15V, ID = -1A, VGS = -10V, RGS = 6Ω 2
Total Gate Charge Qg 88 124 nC VDS = -15V, VGS = -10V, ID = -14.5A 2
Total Gate Charge Qg 46 65 nC VDS = -15V, VGS = -5V, ID = -14.5A 2
Source to Drain Diode Forward Voltage VSD -0.7 -1.2 V VGS = 0V, IS = -2.1A 2
Drain to Source Voltage VDS -30 V 1
Gate to Source Voltage VGS -25 25 V 1
Drain Current Continuous ID -14.5 A Note 1a 1
Drain Current Pulsed ID -75 A Pulsed 1
Power Dissipation for Single Operation PD 2.5 W Note 1a 1
Power Dissipation for Single Operation PD 1.2 W Note 1b 1
Power Dissipation for Single Operation PD 1 W Note 1c 1
Operating and Storage Temperature TJ, TSTG -55 150 °C 1
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ -20 mV/°C ID = -250 µA, referenced to 25°C 2
Gate to Source Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ 8.1 mV/°C ID = -250 µA, referenced to 25°C 2
Forward Transconductance gFS 60 S VDS = -5V, ID = -14.5A 2
Gate to Source Gate Charge Qgs 8 nC 2
Gate to Drain Charge Qgd 23.5 nC 2
Thermal Resistance, Junction to Ambient RθJA 50 °C/W Note 1a: 1 in² pad of 2 oz copper, 10 sec 2
Thermal Resistance, Junction to Ambient RθJA 105 °C/W Note 1b: 0.04 in² pad of 2 oz copper 2
Thermal Resistance, Junction to Ambient RθJA 125 °C/W Note 1c: minimum pad 2
Thermal Resistance, Junction to Case RθJC 25 °C/W Note 1 1

CAD (KiCad official)

  • Symbol: FDS6673BZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds6673bz-etched.step / fds6673bz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6673bz.step / fds6673bz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 f779e499463b7503, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF