component
SIL2308-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSIL2308-TP
MCC Micro Commercial Components · MOSFETs · SOT-23-6L
SIL2308-TP from MCC Micro Commercial Components, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain terminal of the first MOSFET (D1); the datasheet rates drain-source voltage at 20 V for N-channel and -20 V for P-channel, with continuous drain current of 5 A (N-channel) and -4 A (P-channel). |
| 2 | S1 | passive | Source terminal of the first MOSFET (S1); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel. |
| 3 | D2 | passive | Drain terminal of the second MOSFET (D2); the datasheet rates drain-source voltage at 20 V for N-channel and -20 V for P-channel, with continuous drain current of 5 A (N-channel) and -4 A (P-channel). |
| 4 | G2 | input | Gate terminal of the second MOSFET (G2); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel. |
| 5 | S2 | passive | Source terminal of the second MOSFET (S2); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel. |
| 6 | G1 | input | Gate terminal of the first MOSFET (G1); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-channel) | VGS | 12 | V | 1 | |||
| Gate-Source Voltage (P-channel) | VGS | 8 | V | 1 | |||
| Continuous Drain Current (N-channel) | ID | 5 | A | 1 | |||
| Continuous Drain Current (P-channel) | ID | -4 | A | 1 | |||
| Operating Junction Temperature Range | -55 | 150 | °C | 1 | |||
| Storage Temperature Range | -55 | 150 | °C | 1 | |||
| Maximum Thermal Resistance, Junction to Ambient | 119 | °C/W | Junction to ambient; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (Note) | 1 | |||
| Drain-source breakdown voltage (N-channel) | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current (N-channel) | IDSS | 1 | µA | VDS =20V,VGS = 0V | 2 | ||
| Gate-body leakage current (N-channel) | IGSS | -0.1 | 0.1 | µA | VGS =±12V, VDS = 0V | 2 | |
| Gate threshold voltage (N-channel) | VGS(th) | 0.5 | 0.7 | 1 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance (N-channel) | RDS(on) | 38 | mΩ | VGS =4.5V, ID =4.5A | 2 | ||
| Drain-source on-resistance (N-channel) | RDS(on) | 45 | mΩ | VGS =2.5V, ID =3.5A | 2 | ||
| Forward transconductance (N-channel) | gFS | 9 | S | VDS =5V, ID =7A | 2 | ||
| Diode forward voltage (N-channel) | VSD | 0.7 | 1.3 | V | IS=1.7A,VGS=0V | 2 | |
| Total gate charge (N-channel) | Qg | 11 | nC | VDS =10V,VGS =4.5V,ID =4A | 2 | ||
| Gate-source charge (N-channel) | Qgs | 2.3 | nC | VDS =10V,VGS =4.5V,ID =4A | 2 | ||
| Gate-drain charge (N-channel) | Qgd | 2.5 | nC | VDS =10V,VGS =4.5V,ID =4A | 2 | ||
| Input Capacitance (N-channel) | Ciss | 800 | pF | VDS=8V,VGS=0V,f=1MHz | 2 | ||
| Output Capacitance (N-channel) | Coss | 155 | pF | VDS=8V,VGS=0V,f=1MHz | 2 | ||
| Reverse Transfer Capacitance (N-channel) | Crss | 125 | pF | VDS=8V,VGS=0V,f=1MHz | 2 | ||
| Turn-on delay time (N-channel) | td(on) | 18 | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 | ||
| Turn-on rise time (N-channel) | tr | 5 | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 | ||
| Turn-off delay time (N-channel) | td(off) | 43 | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 | ||
| Turn-off fall time (N-channel) | tf | 20 | ns | VDD=10V , VGS=4V , ID=1A, RG=10Ω | 2 | ||
| Drain-source breakdown voltage (P-channel) | V(BR)DSS | -20 | V | VGS = 0V, ID =-250µA | 3 | ||
| Zero gate voltage drain current (P-channel) | IDSS | -1 | µA | VDS =-16V,VGS = 0V | 3 | ||
| Gate-body leakage current (P-channel) | IGSS | -100 | 100 | nA | VGS =±12V, VDS = 0V | 3 | |
| Gate threshold voltage (P-channel) | VGS(th) | -0.5 | -0.7 | -1 | V | VDS =VGS, ID = -250µA | 3 |
| Drain-source on-resistance (P-channel) | RDS(on) | 70 | 90 | mΩ | VGS = -4.5V, ID = -0.5A | 3 | |
| Drain-source on-resistance (P-channel) | RDS(on) | 90 | 110 | mΩ | VGS = -2.5V, ID = -0.5A | 3 | |
| Forward transconductance (P-channel) | gFS | 5 | S | VDS =-5V, ID = -2A | 3 | ||
| Input Capacitance (P-channel) | Ciss | 405 | pF | VDS=-10V,VGS=0V,f=1MHz | 3 | ||
| Output Capacitance (P-channel) | Coss | 75 | pF | VDS=-10V,VGS=0V,f=1MHz | 3 | ||
| Reverse Transfer Capacitance (P-channel) | Crss | 55 | pF | VDS=-10V,VGS=0V,f=1MHz | 3 | ||
| Gate resistance (P-channel) | Rg | 6 | Ω | f =1MHz | 3 | ||
| Total Gate Charge (P-channel) | Qg | 3.3 | 12 | nC | VDS =-10V,VGS =-2.5V,ID=-3A | 3 | |
| Gate-Source Charge (P-channel) | Qgs | 0.7 | nC | VDS =-10V,VGS =-2.5V,ID=-3A | 3 | ||
| Gate-Drain Charge (P-channel) | Qgd | 1.3 | nC | VDS =-10V,VGS =-2.5V,ID=-3A | 3 | ||
| Turn-on delay time (P-channel) | td(on) | 11 | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 | ||
| Turn-on rise time (P-channel) | tr | 35 | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 | ||
| Turn-off delay time (P-channel) | td(off) | 30 | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 | ||
| Turn-off fall time (P-channel) | tf | 10 | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω | 3 | ||
| Diode forward voltage (P-channel) | VSD | -0.7 | -1.3 | V | VGS =0V, IS=-1.25A | 3 |
CAD (KiCad official)
- Symbol:
SIL2308-TP - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
sil2308-tp-etched.step/sil2308-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sil2308-tp.step/sil2308-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (6 pp, sha256
f3288c2bc947d063, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).