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SIL2308-TP

Public Made by Adom

by adom

MCC Micro Commercial Components MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SIL2308-TP

MCC Micro Commercial Components · MOSFETs · SOT-23-6L

SIL2308-TP from MCC Micro Commercial Components, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1 passive Drain terminal of the first MOSFET (D1); the datasheet rates drain-source voltage at 20 V for N-channel and -20 V for P-channel, with continuous drain current of 5 A (N-channel) and -4 A (P-channel).
2 S1 passive Source terminal of the first MOSFET (S1); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel.
3 D2 passive Drain terminal of the second MOSFET (D2); the datasheet rates drain-source voltage at 20 V for N-channel and -20 V for P-channel, with continuous drain current of 5 A (N-channel) and -4 A (P-channel).
4 G2 input Gate terminal of the second MOSFET (G2); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel.
5 S2 passive Source terminal of the second MOSFET (S2); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel.
6 G1 input Gate terminal of the first MOSFET (G1); gate-source voltage is rated ±8 V for N-channel and ±12 V for P-channel.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDS 20 V 1
Drain-Source Voltage (P-channel) VDS -20 V 1
Gate-Source Voltage (N-channel) VGS 12 V 1
Gate-Source Voltage (P-channel) VGS 8 V 1
Continuous Drain Current (N-channel) ID 5 A 1
Continuous Drain Current (P-channel) ID -4 A 1
Operating Junction Temperature Range -55 150 °C 1
Storage Temperature Range -55 150 °C 1
Maximum Thermal Resistance, Junction to Ambient 119 °C/W Junction to ambient; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (Note) 1
Drain-source breakdown voltage (N-channel) V(BR)DSS 20 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current (N-channel) IDSS 1 µA VDS =20V,VGS = 0V 2
Gate-body leakage current (N-channel) IGSS -0.1 0.1 µA VGS =±12V, VDS = 0V 2
Gate threshold voltage (N-channel) VGS(th) 0.5 0.7 1 V VDS =VGS, ID =250µA 2
Drain-source on-resistance (N-channel) RDS(on) 38 mΩ VGS =4.5V, ID =4.5A 2
Drain-source on-resistance (N-channel) RDS(on) 45 mΩ VGS =2.5V, ID =3.5A 2
Forward transconductance (N-channel) gFS 9 S VDS =5V, ID =7A 2
Diode forward voltage (N-channel) VSD 0.7 1.3 V IS=1.7A,VGS=0V 2
Total gate charge (N-channel) Qg 11 nC VDS =10V,VGS =4.5V,ID =4A 2
Gate-source charge (N-channel) Qgs 2.3 nC VDS =10V,VGS =4.5V,ID =4A 2
Gate-drain charge (N-channel) Qgd 2.5 nC VDS =10V,VGS =4.5V,ID =4A 2
Input Capacitance (N-channel) Ciss 800 pF VDS=8V,VGS=0V,f=1MHz 2
Output Capacitance (N-channel) Coss 155 pF VDS=8V,VGS=0V,f=1MHz 2
Reverse Transfer Capacitance (N-channel) Crss 125 pF VDS=8V,VGS=0V,f=1MHz 2
Turn-on delay time (N-channel) td(on) 18 ns VDD=10V , VGS=4V , ID=1A, RG=10Ω 2
Turn-on rise time (N-channel) tr 5 ns VDD=10V , VGS=4V , ID=1A, RG=10Ω 2
Turn-off delay time (N-channel) td(off) 43 ns VDD=10V , VGS=4V , ID=1A, RG=10Ω 2
Turn-off fall time (N-channel) tf 20 ns VDD=10V , VGS=4V , ID=1A, RG=10Ω 2
Drain-source breakdown voltage (P-channel) V(BR)DSS -20 V VGS = 0V, ID =-250µA 3
Zero gate voltage drain current (P-channel) IDSS -1 µA VDS =-16V,VGS = 0V 3
Gate-body leakage current (P-channel) IGSS -100 100 nA VGS =±12V, VDS = 0V 3
Gate threshold voltage (P-channel) VGS(th) -0.5 -0.7 -1 V VDS =VGS, ID = -250µA 3
Drain-source on-resistance (P-channel) RDS(on) 70 90 mΩ VGS = -4.5V, ID = -0.5A 3
Drain-source on-resistance (P-channel) RDS(on) 90 110 mΩ VGS = -2.5V, ID = -0.5A 3
Forward transconductance (P-channel) gFS 5 S VDS =-5V, ID = -2A 3
Input Capacitance (P-channel) Ciss 405 pF VDS=-10V,VGS=0V,f=1MHz 3
Output Capacitance (P-channel) Coss 75 pF VDS=-10V,VGS=0V,f=1MHz 3
Reverse Transfer Capacitance (P-channel) Crss 55 pF VDS=-10V,VGS=0V,f=1MHz 3
Gate resistance (P-channel) Rg 6 Ω f =1MHz 3
Total Gate Charge (P-channel) Qg 3.3 12 nC VDS =-10V,VGS =-2.5V,ID=-3A 3
Gate-Source Charge (P-channel) Qgs 0.7 nC VDS =-10V,VGS =-2.5V,ID=-3A 3
Gate-Drain Charge (P-channel) Qgd 1.3 nC VDS =-10V,VGS =-2.5V,ID=-3A 3
Turn-on delay time (P-channel) td(on) 11 ns VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω 3
Turn-on rise time (P-channel) tr 35 ns VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω 3
Turn-off delay time (P-channel) td(off) 30 ns VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω 3
Turn-off fall time (P-channel) tf 10 ns VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10Ω,RGEN=1Ω 3
Diode forward voltage (P-channel) VSD -0.7 -1.3 V VGS =0V, IS=-1.25A 3

CAD (KiCad official)

  • Symbol: SIL2308-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: sil2308-tp-etched.step / sil2308-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sil2308-tp.step / sil2308-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (6 pp, sha256 f3288c2bc947d063, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF