component
AO4601-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4601-VB
VBsemi Elec · MOSFETs · SO-8
AO4601-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30 V VDS, 8 A package-limited ID). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS rating ±20 V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30 V VDS, -8 A package-limited ID). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS rating ±20 V). |
| 5 | D2 | passive | Drain of the P-channel MOSFET, internally tied to pin 6 (-30 V VDS, pulsed IDM -40 A). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, internally tied to pin 5 (-30 V VDS, pulsed IDM -40 A). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, internally tied to pin 8 (30 V VDS, pulsed IDM 40 A). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, internally tied to pin 7 (30 V VDS, pulsed IDM 40 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 30 | V | N-Channel, TA=25 °C | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -30 | V | P-Channel, TA=25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | N- and P-Channel | 1 | |
| Continuous Drain Current (N-Ch) | ID | 8 | A | TJ=150 °C, TC=25 °C, N-Channel | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -8 | A | TJ=150 °C, TC=25 °C, P-Channel | 1 | ||
| Continuous Drain Current (N-Ch) | ID | 6.8 | A | TC=70 °C, N-Channel | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -6.8 | A | TC=70 °C, P-Channel | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -6.6 | A | TA=25 °C, P-Channel, notes b, c | 1 | ||
| Continuous Drain Current (N-Ch) | ID | 5.4 | A | TA=70 °C, N-Channel, notes b, c | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -5.3 | A | TA=70 °C, P-Channel, notes b, c | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 40 | A | 10 µs pulse width, N-Channel | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -40 | A | 10 µs pulse width, P-Channel | 1 | ||
| Source-Drain Diode Current (N-Ch) | IS | 2.6 | A | TC=25 °C, N-Channel | 1 | ||
| Source-Drain Diode Current (P-Ch) | IS | -2.6 | A | TC=25 °C, P-Channel | 1 | ||
| Pulsed Source-Drain Current (N-Ch) | ISM | 40 | A | N-Channel | 1 | ||
| Pulsed Source-Drain Current (P-Ch) | ISM | -40 | A | P-Channel | 1 | ||
| Single Pulse Avalanche Current (N-Ch) | IAS | 10 | A | L=0.1 mH, N-Channel | 1 | ||
| Single Pulse Avalanche Current (P-Ch) | IAS | 20 | A | L=0.1 mH, P-Channel | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA=25 °C, notes b, c | 1 | ||
| Maximum Power Dissipation | PD | 1.28 | W | TA=70 °C, notes b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (N-Ch) | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s, N-Channel | 1 | |
| Junction-to-Ambient Thermal Resistance (P-Ch) | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s, P-Channel | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance (N-Ch) | RthJF | 30 | 40 | °C/W | Steady state, N-Channel | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance (P-Ch) | RthJF | 29 | 38 | °C/W | Steady state, P-Channel | 1 | |
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 30 | V | VGS=0 V, ID=250 µA, N-Channel | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -30 | V | VGS=0 V, ID=-250 µA, P-Channel | 2 | ||
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1 | 2 | V | VDS=VGS, ID=250 µA, N-Channel | 2 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | -2 | V | VDS=VGS, ID=-250 µA, P-Channel | 2 | |
| Gate-Body Leakage (N-Ch) | IGSS | -100 | 100 | nA | VDS=0 V, VGS=±12 V, N-Channel | 2 | |
| Gate-Body Leakage (P-Ch) | IGSS | -100 | 100 | nA | VDS=0 V, VGS=±12 V, P-Channel | 2 | |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | µA | VDS=30 V, VGS=0 V, N-Channel | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | µA | VDS=-30 V, VGS=0 V, P-Channel | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 10 | µA | VDS=30 V, VGS=0 V, TJ=55 °C, N-Channel | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -10 | µA | VDS=-30 V, VGS=0 V, TJ=55 °C, P-Channel | 2 | ||
| On-State Drain Current (N-Ch) | ID(on) | 20 | A | VDS=5 V, VGS=10 V, N-Channel | 2 | ||
| On-State Drain Current (P-Ch) | ID(on) | -20 | A | VDS=-5 V, VGS=-10 V, P-Channel | 2 | ||
| Gate Resistance (P-Ch) | Rg | 1.2 | 5.7 | 9.6 | Ω | f=1 MHz, P-Channel | 2 |
| Continuous Source-Drain Diode Current (N-Ch) | IS | 2.6 | A | TC=25 °C, N-Channel | 3 | ||
| Continuous Source-Drain Diode Current (P-Ch) | IS | -2.6 | A | TC=25 °C, P-Channel | 3 | ||
| Body Diode Voltage (N-Ch) | VSD | 0.81 | 1.2 | V | IS=5.4 A, N-Channel | 3 | |
| Body Diode Voltage (P-Ch) | VSD | -0.77 | -1.2 | V | IS=-2 A, P-Channel | 3 |
CAD (KiCad official)
- Symbol:
AO4601-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ao4601-vb-etched.step/ao4601-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4601-vb.step/ao4601-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
a8a31ca47df5998b, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).