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AO4601-VB

VBsemi Elec · MOSFETs · SO-8

AO4601-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of the N-channel MOSFET (30 V VDS, 8 A package-limited ID).
2	G1	input	Gate of the N-channel MOSFET (VGS rating ±20 V).
3	S2	passive	Source of the P-channel MOSFET (-30 V VDS, -8 A package-limited ID).
4	G2	input	Gate of the P-channel MOSFET (VGS rating ±20 V).
5	D2	passive	Drain of the P-channel MOSFET, internally tied to pin 6 (-30 V VDS, pulsed IDM -40 A).
6	D2	passive	Drain of the P-channel MOSFET, internally tied to pin 5 (-30 V VDS, pulsed IDM -40 A).
7	D1	passive	Drain of the N-channel MOSFET, internally tied to pin 8 (30 V VDS, pulsed IDM 40 A).
8	D1	passive	Drain of the N-channel MOSFET, internally tied to pin 7 (30 V VDS, pulsed IDM 40 A).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage (N-Ch)	VDS			30	V	N-Channel, TA=25 °C	1
Drain-Source Voltage (P-Ch)	VDS	-30			V	P-Channel, TA=25 °C	1
Gate-Source Voltage	VGS	-20		20	V	N- and P-Channel	1
Continuous Drain Current (N-Ch)	ID			8	A	TJ=150 °C, TC=25 °C, N-Channel	1
Continuous Drain Current (P-Ch)	ID	-8			A	TJ=150 °C, TC=25 °C, P-Channel	1
Continuous Drain Current (N-Ch)	ID			6.8	A	TC=70 °C, N-Channel	1
Continuous Drain Current (P-Ch)	ID	-6.8			A	TC=70 °C, P-Channel	1
Continuous Drain Current (P-Ch)	ID	-6.6			A	TA=25 °C, P-Channel, notes b, c	1
Continuous Drain Current (N-Ch)	ID			5.4	A	TA=70 °C, N-Channel, notes b, c	1
Continuous Drain Current (P-Ch)	ID	-5.3			A	TA=70 °C, P-Channel, notes b, c	1
Pulsed Drain Current (N-Ch)	IDM			40	A	10 µs pulse width, N-Channel	1
Pulsed Drain Current (P-Ch)	IDM	-40			A	10 µs pulse width, P-Channel	1
Source-Drain Diode Current (N-Ch)	IS			2.6	A	TC=25 °C, N-Channel	1
Source-Drain Diode Current (P-Ch)	IS	-2.6			A	TC=25 °C, P-Channel	1
Pulsed Source-Drain Current (N-Ch)	ISM			40	A	N-Channel	1
Pulsed Source-Drain Current (P-Ch)	ISM	-40			A	P-Channel	1
Single Pulse Avalanche Current (N-Ch)	IAS			10	A	L=0.1 mH, N-Channel	1
Single Pulse Avalanche Current (P-Ch)	IAS			20	A	L=0.1 mH, P-Channel	1
Maximum Power Dissipation	PD			2	W	TA=25 °C, notes b, c	1
Maximum Power Dissipation	PD			1.28	W	TA=70 °C, notes b, c	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance (N-Ch)	RthJA		50	62.5	°C/W	t ≤ 10 s, N-Channel	1
Junction-to-Ambient Thermal Resistance (P-Ch)	RthJA		47	62.5	°C/W	t ≤ 10 s, P-Channel	1
Junction-to-Foot (Drain) Thermal Resistance (N-Ch)	RthJF		30	40	°C/W	Steady state, N-Channel	1
Junction-to-Foot (Drain) Thermal Resistance (P-Ch)	RthJF		29	38	°C/W	Steady state, P-Channel	1
Drain-Source Breakdown Voltage (N-Ch)	VDS	30			V	VGS=0 V, ID=250 µA, N-Channel	2
Drain-Source Breakdown Voltage (P-Ch)	VDS	-30			V	VGS=0 V, ID=-250 µA, P-Channel	2
Gate Threshold Voltage (N-Ch)	VGS(th)	1		2	V	VDS=VGS, ID=250 µA, N-Channel	2
Gate Threshold Voltage (P-Ch)	VGS(th)	-1		-2	V	VDS=VGS, ID=-250 µA, P-Channel	2
Gate-Body Leakage (N-Ch)	IGSS	-100		100	nA	VDS=0 V, VGS=±12 V, N-Channel	2
Gate-Body Leakage (P-Ch)	IGSS	-100		100	nA	VDS=0 V, VGS=±12 V, P-Channel	2
Zero Gate Voltage Drain Current (N-Ch)	IDSS			1	µA	VDS=30 V, VGS=0 V, N-Channel	2
Zero Gate Voltage Drain Current (P-Ch)	IDSS			-1	µA	VDS=-30 V, VGS=0 V, P-Channel	2
Zero Gate Voltage Drain Current (N-Ch)	IDSS			10	µA	VDS=30 V, VGS=0 V, TJ=55 °C, N-Channel	2
Zero Gate Voltage Drain Current (P-Ch)	IDSS			-10	µA	VDS=-30 V, VGS=0 V, TJ=55 °C, P-Channel	2
On-State Drain Current (N-Ch)	ID(on)	20			A	VDS=5 V, VGS=10 V, N-Channel	2
On-State Drain Current (P-Ch)	ID(on)	-20			A	VDS=-5 V, VGS=-10 V, P-Channel	2
Gate Resistance (P-Ch)	Rg	1.2	5.7	9.6	Ω	f=1 MHz, P-Channel	2
Continuous Source-Drain Diode Current (N-Ch)	IS			2.6	A	TC=25 °C, N-Channel	3
Continuous Source-Drain Diode Current (P-Ch)	IS	-2.6			A	TC=25 °C, P-Channel	3
Body Diode Voltage (N-Ch)	VSD		0.81	1.2	V	IS=5.4 A, N-Channel	3
Body Diode Voltage (P-Ch)	VSD		-0.77	-1.2	V	IS=-2 A, P-Channel	3

CAD (KiCad official)

Symbol: AO4601-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: ao4601-vb-etched.step / ao4601-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4601-vb.step / ao4601-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (14 pp, sha256 a8a31ca47df5998b, retrieved 2026-10-27, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF