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AO4601-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4601-VB

VBsemi Elec · MOSFETs · SO-8

AO4601-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS, 8 A package-limited ID).
2 G1 input Gate of the N-channel MOSFET (VGS rating ±20 V).
3 S2 passive Source of the P-channel MOSFET (-30 V VDS, -8 A package-limited ID).
4 G2 input Gate of the P-channel MOSFET (VGS rating ±20 V).
5 D2 passive Drain of the P-channel MOSFET, internally tied to pin 6 (-30 V VDS, pulsed IDM -40 A).
6 D2 passive Drain of the P-channel MOSFET, internally tied to pin 5 (-30 V VDS, pulsed IDM -40 A).
7 D1 passive Drain of the N-channel MOSFET, internally tied to pin 8 (30 V VDS, pulsed IDM 40 A).
8 D1 passive Drain of the N-channel MOSFET, internally tied to pin 7 (30 V VDS, pulsed IDM 40 A).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V N-Channel, TA=25 °C 1
Drain-Source Voltage (P-Ch) VDS -30 V P-Channel, TA=25 °C 1
Gate-Source Voltage VGS -20 20 V N- and P-Channel 1
Continuous Drain Current (N-Ch) ID 8 A TJ=150 °C, TC=25 °C, N-Channel 1
Continuous Drain Current (P-Ch) ID -8 A TJ=150 °C, TC=25 °C, P-Channel 1
Continuous Drain Current (N-Ch) ID 6.8 A TC=70 °C, N-Channel 1
Continuous Drain Current (P-Ch) ID -6.8 A TC=70 °C, P-Channel 1
Continuous Drain Current (P-Ch) ID -6.6 A TA=25 °C, P-Channel, notes b, c 1
Continuous Drain Current (N-Ch) ID 5.4 A TA=70 °C, N-Channel, notes b, c 1
Continuous Drain Current (P-Ch) ID -5.3 A TA=70 °C, P-Channel, notes b, c 1
Pulsed Drain Current (N-Ch) IDM 40 A 10 µs pulse width, N-Channel 1
Pulsed Drain Current (P-Ch) IDM -40 A 10 µs pulse width, P-Channel 1
Source-Drain Diode Current (N-Ch) IS 2.6 A TC=25 °C, N-Channel 1
Source-Drain Diode Current (P-Ch) IS -2.6 A TC=25 °C, P-Channel 1
Pulsed Source-Drain Current (N-Ch) ISM 40 A N-Channel 1
Pulsed Source-Drain Current (P-Ch) ISM -40 A P-Channel 1
Single Pulse Avalanche Current (N-Ch) IAS 10 A L=0.1 mH, N-Channel 1
Single Pulse Avalanche Current (P-Ch) IAS 20 A L=0.1 mH, P-Channel 1
Maximum Power Dissipation PD 2 W TA=25 °C, notes b, c 1
Maximum Power Dissipation PD 1.28 W TA=70 °C, notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance (N-Ch) RthJA 50 62.5 °C/W t ≤ 10 s, N-Channel 1
Junction-to-Ambient Thermal Resistance (P-Ch) RthJA 47 62.5 °C/W t ≤ 10 s, P-Channel 1
Junction-to-Foot (Drain) Thermal Resistance (N-Ch) RthJF 30 40 °C/W Steady state, N-Channel 1
Junction-to-Foot (Drain) Thermal Resistance (P-Ch) RthJF 29 38 °C/W Steady state, P-Channel 1
Drain-Source Breakdown Voltage (N-Ch) VDS 30 V VGS=0 V, ID=250 µA, N-Channel 2
Drain-Source Breakdown Voltage (P-Ch) VDS -30 V VGS=0 V, ID=-250 µA, P-Channel 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 2 V VDS=VGS, ID=250 µA, N-Channel 2
Gate Threshold Voltage (P-Ch) VGS(th) -1 -2 V VDS=VGS, ID=-250 µA, P-Channel 2
Gate-Body Leakage (N-Ch) IGSS -100 100 nA VDS=0 V, VGS=±12 V, N-Channel 2
Gate-Body Leakage (P-Ch) IGSS -100 100 nA VDS=0 V, VGS=±12 V, P-Channel 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 µA VDS=30 V, VGS=0 V, N-Channel 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 µA VDS=-30 V, VGS=0 V, P-Channel 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 10 µA VDS=30 V, VGS=0 V, TJ=55 °C, N-Channel 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -10 µA VDS=-30 V, VGS=0 V, TJ=55 °C, P-Channel 2
On-State Drain Current (N-Ch) ID(on) 20 A VDS=5 V, VGS=10 V, N-Channel 2
On-State Drain Current (P-Ch) ID(on) -20 A VDS=-5 V, VGS=-10 V, P-Channel 2
Gate Resistance (P-Ch) Rg 1.2 5.7 9.6 Ω f=1 MHz, P-Channel 2
Continuous Source-Drain Diode Current (N-Ch) IS 2.6 A TC=25 °C, N-Channel 3
Continuous Source-Drain Diode Current (P-Ch) IS -2.6 A TC=25 °C, P-Channel 3
Body Diode Voltage (N-Ch) VSD 0.81 1.2 V IS=5.4 A, N-Channel 3
Body Diode Voltage (P-Ch) VSD -0.77 -1.2 V IS=-2 A, P-Channel 3

CAD (KiCad official)

  • Symbol: AO4601-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4601-vb-etched.step / ao4601-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4601-vb.step / ao4601-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 a8a31ca47df5998b, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF