component
IRL640PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRL640PBF
Vishay Intertech · MOSFETs · TO-220AB
IRL640PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive with RDS(on) specified at VGS = 4 V and 5 V, absolute maximum VGS of ±10 V. |
| 2 | D | passive | Drain (also the mounting tab, junction-to-case is to the drain); VDS maximum 200 V and continuous ID 17 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source-drain body diode current IS of 17 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 10 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.18 | Ω | VGS = 5.0 V, ID = 10 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.27 | Ω | VGS = 4.0 V, ID = 8.5 A | 2 | ||
| Forward Transconductance | gfs | 16 | S | VDS = 50 V, ID = 10 A | 2 | ||
| Total Gate Charge | Qg | 66 | nC | VGS = 5.0 V, ID = 17 A, VDS = 160 V, see fig. 6 and 13 b | 2 | ||
| Gate-Source Charge | Qgs | 9 | nC | VGS = 5.0 V, ID = 17 A, VDS = 160 V, see fig. 6 and 13 b | 2 | ||
| Gate-Drain Charge | Qgd | 38 | nC | VGS = 5.0 V, ID = 17 A, VDS = 160 V, see fig. 6 and 13 b | 2 | ||
| Gate Input Resistance | Rg | 0.3 | 1.2 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous Source-Drain Diode Current | IS | 17 | A | MOSFET symbol showing the integral reverse p - n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 68 | A | 2 | |||
| Body Diode Voltage | VSD | 2 | V | TJ = 25 °C, IS = 17 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 310 | 470 | ns | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 3.2 | 4.8 | μC | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs | 2 | |
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous Drain Current | ID | 17 | A | VGS at 5.0 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 11 | A | VGS at 5.0 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 68 | A | Repetitive rating (note a) | 1 | ||
| Linear Derating Factor | 1 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 580 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25 Ω, IAS = 17 A (note b) | 1 | ||
| Repetitive Avalanche Current | IAR | 10 | A | Repetitive rating (note a) | 1 | ||
| Repetitive Avalanche Energy | EAR | 13 | mJ | Repetitive rating (note a) | 1 | ||
| Maximum Power Dissipation | PD | 125 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5 | V/ns | ISD 17 A, dI/dt 150 A/ms, VDD VDS, TJ 150 °C (note c; <= signs lost in extraction) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | 1.6 mm from case, 10 s (note d) | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 1 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRL640PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irl640pbf-etched.step/irl640pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irl640pbf.step/irl640pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
cf1b0d1f59e2fdca, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).