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IRL640PBF

Vishay Intertech · MOSFETs · TO-220AB

IRL640PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; logic-level drive with RDS(on) specified at VGS = 4 V and 5 V, absolute maximum VGS of ±10 V.
2 D passive Drain (also the mounting tab, junction-to-case is to the drain); VDS maximum 200 V and continuous ID 17 A at TC = 25 °C.
3 S passive Source; continuous source-drain body diode current IS of 17 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 200 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1 2 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 10 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.18 Ω VGS = 5.0 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.27 Ω VGS = 4.0 V, ID = 8.5 A 2
Forward Transconductance gfs 16 S VDS = 50 V, ID = 10 A 2
Total Gate Charge Qg 66 nC VGS = 5.0 V, ID = 17 A, VDS = 160 V, see fig. 6 and 13 b 2
Gate-Source Charge Qgs 9 nC VGS = 5.0 V, ID = 17 A, VDS = 160 V, see fig. 6 and 13 b 2
Gate-Drain Charge Qgd 38 nC VGS = 5.0 V, ID = 17 A, VDS = 160 V, see fig. 6 and 13 b 2
Gate Input Resistance Rg 0.3 1.2 Ω f = 1 MHz, open drain 2
Continuous Source-Drain Diode Current IS 17 A MOSFET symbol showing the integral reverse p - n junction diode 2
Pulsed Diode Forward Current ISM 68 A 2
Body Diode Voltage VSD 2 V TJ = 25 °C, IS = 17 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 310 470 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 3.2 4.8 μC TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs 2
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -10 10 V 1
Continuous Drain Current ID 17 A VGS at 5.0 V, TC = 25 °C 1
Continuous Drain Current ID 11 A VGS at 5.0 V, TC = 100 °C 1
Pulsed Drain Current IDM 68 A Repetitive rating (note a) 1
Linear Derating Factor 1 W/°C 1
Single Pulse Avalanche Energy EAS 580 mJ VDD = 50 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25 Ω, IAS = 17 A (note b) 1
Repetitive Avalanche Current IAR 10 A Repetitive rating (note a) 1
Repetitive Avalanche Energy EAR 13 mJ Repetitive rating (note a) 1
Maximum Power Dissipation PD 125 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5 V/ns ISD 17 A, dI/dt 150 A/ms, VDD VDS, TJ 150 °C (note c; <= signs lost in extraction) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak temperature) 300 °C 1.6 mm from case, 10 s (note d) 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRL640PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irl640pbf-etched.step / irl640pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irl640pbf.step / irl640pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 cf1b0d1f59e2fdca, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF