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NCE4614
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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE4614
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE4614 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (VDS 40V, ID 8A at TA=25C). |
| 2 | G2 | input | Gate of the N-channel MOSFET; absolute maximum VGS ±20V. |
| 3 | S1 | passive | Source of the P-channel MOSFET (VDS -40V, ID -7A at TA=25C). |
| 4 | G1 | input | Gate of the P-channel MOSFET; absolute maximum VGS ±20V. |
| 5 | D1 | passive | Drain of the P-channel MOSFET, shorted with pin 6; VDS -40V, pulsed IDM -30A. |
| 6 | D1 | passive | Drain of the P-channel MOSFET, shorted with pin 5; VDS -40V, pulsed IDM -30A. |
| 7 | D2 | passive | Drain of the N-channel MOSFET, shorted with pin 8; VDS 40V, pulsed IDM 40A. |
| 8 | D2 | passive | Drain of the N-channel MOSFET, shorted with pin 7; VDS 40V, pulsed IDM 40A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 40 | V | 1 | |||
| Drain-Source Voltage (P-channel) | VDS | -40 | V | 1 | |||
| Gate-Source Voltage (N-channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-channel) | ID | 8 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (N-channel) | ID | 6 | A | TA=70℃ | 1 | ||
| Continuous Drain Current (P-channel) | ID | -7 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (P-channel) | ID | -5.5 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 40 | A | Note 1 | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -30 | A | Note 1 | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 2 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 2 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range (N-channel) | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction and Storage Temperature Range (P-channel) | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(ON) | 14 | 19 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance (N-channel) | RDS(ON) | 19 | 29 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Forward Transconductance (N-channel) | gFS | 33 | S | VDS=5V,ID=8A | 2 | ||
| Diode Forward Voltage (N-channel) | VSD | 0.8 | 1.2 | V | VGS=0V,IS=8A | 2 | |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -40 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | μA | VDS=-40V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-channel) | RDS(ON) | 29 | 35 | mΩ | VGS=-10V, ID=-8A | 3 | |
| Drain-Source On-State Resistance (P-channel) | RDS(ON) | 34 | 45 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| Forward Transconductance (P-channel) | gFS | 20 | S | VDS=-5V,ID=-8A | 3 | ||
| Diode Forward Voltage (P-channel) | VSD | -1.2 | V | VGS=0V,IS=-10A | 3 | ||
| Thermal Resistance, Junction-to-Ambient (N-channel) | RθJA | 62.5 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 2 | ||
| Thermal Resistance, Junction-to-Ambient (P-channel) | RθJA | 62.5 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 2 |
CAD (KiCad official)
- Symbol:
NCE4614 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce4614-etched.step/nce4614-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce4614.step/nce4614.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (10 pp, sha256
0390a0a1cc02ac67, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).