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NCE4614

Public Made by Adom

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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nce4614-etched.step nce4614: factory component page (tier=lcsc) · Ray 23d ago
nce4614-hero.glb nce4614: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
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package.json Publish 0.1.0 · Ray 23d ago
page.json nce4614: specified limits as data (metadata.characteristics, 32 rows from the datasheet) · Ray 17d ago
README.md nce4614: specified limits as data (metadata.characteristics, 32 rows from the datasheet) · Ray 17d ago

NCE4614

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE4614 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of the N-channel MOSFET (VDS 40V, ID 8A at TA=25C).
2 G2 input Gate of the N-channel MOSFET; absolute maximum VGS ±20V.
3 S1 passive Source of the P-channel MOSFET (VDS -40V, ID -7A at TA=25C).
4 G1 input Gate of the P-channel MOSFET; absolute maximum VGS ±20V.
5 D1 passive Drain of the P-channel MOSFET, shorted with pin 6; VDS -40V, pulsed IDM -30A.
6 D1 passive Drain of the P-channel MOSFET, shorted with pin 5; VDS -40V, pulsed IDM -30A.
7 D2 passive Drain of the N-channel MOSFET, shorted with pin 8; VDS 40V, pulsed IDM 40A.
8 D2 passive Drain of the N-channel MOSFET, shorted with pin 7; VDS 40V, pulsed IDM 40A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDS 40 V 1
Drain-Source Voltage (P-channel) VDS -40 V 1
Gate-Source Voltage (N-channel) VGS -20 20 V 1
Gate-Source Voltage (P-channel) VGS -20 20 V 1
Continuous Drain Current (N-channel) ID 8 A TA=25℃ 1
Continuous Drain Current (N-channel) ID 6 A TA=70℃ 1
Continuous Drain Current (P-channel) ID -7 A TA=25℃ 1
Continuous Drain Current (P-channel) ID -5.5 A TA=70℃ 1
Pulsed Drain Current (N-channel) IDM 40 A Note 1 1
Pulsed Drain Current (P-channel) IDM -30 A Note 1 1
Maximum Power Dissipation (N-channel) PD 2 W TA=25℃ 1
Maximum Power Dissipation (P-channel) PD 2 W TA=25℃ 1
Operating Junction and Storage Temperature Range (N-channel) TJ,TSTG -55 150 ℃ 1
Operating Junction and Storage Temperature Range (P-channel) TJ,TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage (N-channel) BVDSS 40 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current (N-channel) IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current (N-channel) IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage (N-channel) VGS(th) 1 1.5 2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (N-channel) RDS(ON) 14 19 mΩ VGS=10V, ID=8A 2
Drain-Source On-State Resistance (N-channel) RDS(ON) 19 29 mΩ VGS=4.5V, ID=4A 2
Forward Transconductance (N-channel) gFS 33 S VDS=5V,ID=8A 2
Diode Forward Voltage (N-channel) VSD 0.8 1.2 V VGS=0V,IS=8A 2
Drain-Source Breakdown Voltage (P-channel) BVDSS -40 V VGS=0V ID=-250μA 3
Zero Gate Voltage Drain Current (P-channel) IDSS -1 μA VDS=-40V,VGS=0V 3
Gate-Body Leakage Current (P-channel) IGSS -100 100 nA VGS=±20V,VDS=0V 3
Gate Threshold Voltage (P-channel) VGS(th) -1 -1.5 -2 V VDS=VGS,ID=-250μA 3
Drain-Source On-State Resistance (P-channel) RDS(ON) 29 35 mΩ VGS=-10V, ID=-8A 3
Drain-Source On-State Resistance (P-channel) RDS(ON) 34 45 mΩ VGS=-4.5V, ID=-4A 3
Forward Transconductance (P-channel) gFS 20 S VDS=-5V,ID=-8A 3
Diode Forward Voltage (P-channel) VSD -1.2 V VGS=0V,IS=-10A 3
Thermal Resistance, Junction-to-Ambient (N-channel) RθJA 62.5 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 2
Thermal Resistance, Junction-to-Ambient (P-channel) RθJA 62.5 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 2

CAD (KiCad official)

  • Symbol: NCE4614
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce4614-etched.step / nce4614-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4614.step / nce4614.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (10 pp, sha256 0390a0a1cc02ac67, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF