component
AO4407C
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4407C
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4407C from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; the drain-source voltage is rated at -30V and the gate-source voltage at ±25V. |
| 2 | S | passive | Source of the P-channel MOSFET; the drain-source voltage is rated at -30V and the gate-source voltage at ±25V. |
| 3 | S | passive | Source of the P-channel MOSFET; the drain-source voltage is rated at -30V and the gate-source voltage at ±25V. |
| 4 | G | input | Gate of the P-channel MOSFET; the gate-source voltage is rated at ±25V, and RDS(ON) is specified at VGS=-4.5V and -10V. |
| 5 | D | passive | Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common. |
| 6 | D | passive | Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common. |
| 7 | D | passive | Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common. |
| 8 | D | passive | Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250mA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -5 | µA | TJ=55°C, VDS=-30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | -100 | 100 | nA | VDS=0V, VGS=±25V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.3 | V | VDS=VGS, ID=-250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 11.5 | mΩ | VGS=-10V, ID=-14A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 13.2 | 15.8 | mΩ | TJ=125°C, VGS=-10V, ID=-14A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14.7 | 18.5 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Maximum Body-Diode Continuous Current | IS | -4 | A | 2 | |||
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Gate Resistance | Rg | 3.2 | 6.4 | Ω | f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 40 | 60 | nC | VGS=-10V, VDS=-15V, ID=-14A | 2 | |
| Total Gate Charge (4.5V) | Qg | 20 | 30 | nC | 2 | ||
| Forward Transconductance | gFS | 42 | S | VDS=-5V, ID=-14A | 2 | ||
| Input Capacitance | Ciss | 2050 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 330 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 300 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 6 | nC | 2 | |||
| Gate Drain Charge | Qgd | 10 | nC | 2 | |||
| Turn-On DelayTime | tD(on) | 11 | ns | VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W | 2 | ||
| Turn-On Rise Time | tr | 10 | ns | VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W | 2 | ||
| Turn-Off DelayTime | tD(off) | 40 | ns | VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W | 2 | ||
| Turn-Off Fall Time | tf | 18 | ns | VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W | 2 | ||
| Body Diode Reverse Recovery Time | trr | 14 | ns | IF=-14A, di/dt=500A/ms | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 25 | nC | IF=-14A, di/dt=500A/ms | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Pulsed Drain Current | IDM | -56 | A | 1 | |||
| Avalanche Current | IAS | -33 | A | 1 | |||
| Avalanche Energy | EAS | 54 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
AO4407C - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4407c-etched.step/ao4407c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4407c.step/ao4407c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
b0bb64c3af922943, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).