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AO4407C

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 24d ago
viewers ao4407c: viewers · Ray 24d ago
ao4407c-etched.glb ao4407c: factory component page (tier=lcsc) · Ray 24d ago
ao4407c-etched.step ao4407c: factory component page (tier=lcsc) · Ray 24d ago
ao4407c-hero.glb ao4407c: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
ao4407c-hero.overlay.json Publish 0.1.0 · Ray 24d ago
ao4407c.glb Publish 0.1.0 · Ray 24d ago
ao4407c.kicad_mod Publish 0.1.0 · Ray 24d ago
ao4407c.kicad_sym Publish 0.1.0 · Ray 24d ago
ao4407c.lbr Publish 0.1.0 · Ray 24d ago
ao4407c.step Publish 0.1.0 · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json ao4407c: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 17d ago
README.md ao4407c: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 17d ago

AO4407C

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4407C from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the drain-source voltage is rated at -30V and the gate-source voltage at ±25V.
2 S passive Source of the P-channel MOSFET; the drain-source voltage is rated at -30V and the gate-source voltage at ±25V.
3 S passive Source of the P-channel MOSFET; the drain-source voltage is rated at -30V and the gate-source voltage at ±25V.
4 G input Gate of the P-channel MOSFET; the gate-source voltage is rated at ±25V, and RDS(ON) is specified at VGS=-4.5V and -10V.
5 D passive Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common.
6 D passive Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common.
7 D passive Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common.
8 D passive Drain of the P-channel MOSFET; continuous drain current is -14A at VGS=-10V, and the drain pins are internally common.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250mA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -5 µA TJ=55°C, VDS=-30V, VGS=0V 2
Gate-Body Leakage Current -100 100 nA VDS=0V, VGS=±25V 2
Gate Threshold Voltage VGS(th) -1.3 -1.8 -2.3 V VDS=VGS, ID=-250mA 2
Static Drain-Source On-Resistance RDS(ON) 9.5 11.5 mΩ VGS=-10V, ID=-14A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 13.2 15.8 mΩ TJ=125°C, VGS=-10V, ID=-14A 2
Static Drain-Source On-Resistance RDS(ON) 14.7 18.5 mΩ VGS=-4.5V, ID=-10A 2
Maximum Body-Diode Continuous Current IS -4 A 2
Diode Forward Voltage VSD -0.7 -1 V IS=-1A, VGS=0V 2
Gate Resistance Rg 3.2 6.4 Ω f=1MHz 2
Total Gate Charge (10V) Qg 40 60 nC VGS=-10V, VDS=-15V, ID=-14A 2
Total Gate Charge (4.5V) Qg 20 30 nC 2
Forward Transconductance gFS 42 S VDS=-5V, ID=-14A 2
Input Capacitance Ciss 2050 pF VGS=0V, VDS=-15V, f=1MHz 2
Output Capacitance Coss 330 pF VGS=0V, VDS=-15V, f=1MHz 2
Reverse Transfer Capacitance Crss 300 pF VGS=0V, VDS=-15V, f=1MHz 2
Gate Source Charge Qgs 6 nC 2
Gate Drain Charge Qgd 10 nC 2
Turn-On DelayTime tD(on) 11 ns VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W 2
Turn-On Rise Time tr 10 ns VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W 2
Turn-Off DelayTime tD(off) 40 ns VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W 2
Turn-Off Fall Time tf 18 ns VGS=-10V, VDS=-15V, RL=1.05W, RGEN=3W 2
Body Diode Reverse Recovery Time trr 14 ns IF=-14A, di/dt=500A/ms 2
Body Diode Reverse Recovery Charge Qrr 25 nC IF=-14A, di/dt=500A/ms 2
Drain-Source Voltage VDS -30 V TA=25°C 1
Gate-Source Voltage VGS -25 25 V 1
Pulsed Drain Current IDM -56 A 1
Avalanche Current IAS -33 A 1
Avalanche Energy EAS 54 mJ L=0.1mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: AO4407C
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4407c-etched.step / ao4407c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4407c.step / ao4407c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256 b0bb64c3af922943, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF