component
HBDM60V600X-7
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownHBDM60V600X-7
Diodes Incorporated · Bipolar Transistors - BJT · SOT-363
HBDM60V600X-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BQ1 | input | Base of PNP transistor Q1 (VCBO/VCEO -60V, VEBO -5.5V, IC -600mA continuous). |
| 2 | BQ2 | input | Base of NPN transistor Q2 (VCBO 80V, VCEO 65V, VEBO 6V, IC 500mA continuous). |
| 3 | CQ2 | passive | Collector of NPN transistor Q2 (VCBO 80V, VCEO 65V, IC 500mA continuous). |
| 4 | EQ2 | passive | Emitter of NPN transistor Q2 (VEBO 6V). |
| 5 | EQ1 | passive | Emitter of PNP transistor Q1 (VEBO -5.5V). |
| 6 | CQ1 | passive | Collector of PNP transistor Q1 (VCBO/VCEO -60V, IC -600mA continuous). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating and Storage Temperature Range | TOP, TSTG | -55 | 150 | °C | TA = +25°C | 2 | |
| Power Dissipation, Total Device | PD | 200 | mW | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient Air | RϴJA | 625 | °C/W | Note 5 | 2 | ||
| Q1 PNP Collector-Base Voltage | VCBO | -60 | V | Q1-PNP | 2 | ||
| Q1 PNP Collector-Emitter Voltage | VCEO | -60 | V | Q1-PNP | 2 | ||
| Q1 PNP Emitter-Base Voltage | VEBO | -5.5 | V | Q1-PNP | 2 | ||
| Q1 PNP Collector Current - Continuous | IC | -600 | mA | Q1-PNP, Note 5 | 2 | ||
| Q2 NPN Collector-Base Voltage | VCBO | 80 | V | Q2-NPN | 2 | ||
| Q2 NPN Collector-Emitter Voltage | VCEO | 65 | V | Q2-NPN | 2 | ||
| Q2 NPN Emitter-Base Voltage | VEBO | 6 | V | Q2-NPN | 2 | ||
| Q2 NPN Collector Current - Continuous | IC | 500 | mA | Q2-NPN, Note 5 | 2 | ||
| Q1 Collector-Base Breakdown Voltage | V(BR)CBO | -60 | V | IC = -10µA, IE = 0 | 2 | ||
| Q1 Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | V | IC = -10mA, IB = 0 | 2 | ||
| Q1 Emitter-Base Breakdown Voltage | V(BR)EBO | -5.5 | V | IE = -10µA, IC = 0 | 2 | ||
| Q1 Collector Cutoff Current | ICBO | -10 | nA | VCB = -50V, IE = 0 | 2 | ||
| Q1 Collector Cutoff Current | ICEX | -50 | nA | VCE = -30V, VEB(OFF) = 0.5V | 2 | ||
| Q1 Base Cutoff Current | IBL | -50 | nA | VCE = -30V, VEB(OFF) = -0.5V | 2 | ||
| Q1 DC Current Gain | hFE | 100 | IC = -100µA, VCE = -10V | 2 | |||
| Q1 DC Current Gain | hFE | 50 | IC = -500mA, VCE = -10V | 2 | |||
| Q1 Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC = -150mA, IB = -15mA | 2 | ||
| Q1 Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC = -500mA, IB = -50mA | 2 | ||
| Q1 Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | V | IC = -150mA, IB = -15mA | 2 | ||
| Q1 Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | V | IC = -500mA, IB = -50mA | 2 | ||
| Q2 Collector-Base Breakdown Voltage | V(BR)CBO | 80 | V | IC = 100µA, IE = 0 | 3 | ||
| Q2 Collector-Emitter Breakdown Voltage | V(BR)CEO | 65 | V | IC = 1mA, IB = 0 | 3 | ||
| Q2 Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 100µA, IC = 0 | 3 | ||
| Q2 Collector-Base Cutoff Current | ICBO | 100 | nA | VCB = 80V, IE = 0 | 3 | ||
| Q2 Collector Cutoff Current | ICES | 100 | nA | VCE = 90V, VBE = 0 | 3 | ||
| Q2 Emitter-Base Cutoff Current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 3 | ||
| Q2 DC Current Gain | hFE | 250 | VCE = 1V, IC = 10mA | 3 | |||
| Q2 DC Current Gain | hFE | 100 | VCE = 1V, IC = 100mA | 3 | |||
| Q2 Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | 0.4 | V | IC = 100mA, IB = 10mA | 3 | |
| Q2 Base-Emitter Turn-on Voltage | VBE(on) | 0.7 | 0.75 | 0.8 | V | VCE = 1V, IC = 100mA | 3 |
| Q2 Base-Emitter Saturation Voltage | VBE(sat) | 0.95 | V | IC = 100mA, IB = 5mA | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminal Connections: See Schematic & Pin Configuration Terminals: Finish, Matte Tin Annealed over Alloy 42 Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
HBDM60V600X-7 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
hbdm60v600x-7-etched.step/hbdm60v600x-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hbdm60v600x-7.step/hbdm60v600x-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (9 pp, sha256
bd191c7c6a7ab5ab, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).