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HBDM60V600X-7

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Diodes Incorporated Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HBDM60V600X-7

Diodes Incorporated · Bipolar Transistors - BJT · SOT-363

HBDM60V600X-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BQ1 input Base of PNP transistor Q1 (VCBO/VCEO -60V, VEBO -5.5V, IC -600mA continuous).
2 BQ2 input Base of NPN transistor Q2 (VCBO 80V, VCEO 65V, VEBO 6V, IC 500mA continuous).
3 CQ2 passive Collector of NPN transistor Q2 (VCBO 80V, VCEO 65V, IC 500mA continuous).
4 EQ2 passive Emitter of NPN transistor Q2 (VEBO 6V).
5 EQ1 passive Emitter of PNP transistor Q1 (VEBO -5.5V).
6 CQ1 passive Collector of PNP transistor Q1 (VCBO/VCEO -60V, IC -600mA continuous).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating and Storage Temperature Range TOP, TSTG -55 150 °C TA = +25°C 2
Power Dissipation, Total Device PD 200 mW Note 5 2
Thermal Resistance, Junction to Ambient Air RϴJA 625 °C/W Note 5 2
Q1 PNP Collector-Base Voltage VCBO -60 V Q1-PNP 2
Q1 PNP Collector-Emitter Voltage VCEO -60 V Q1-PNP 2
Q1 PNP Emitter-Base Voltage VEBO -5.5 V Q1-PNP 2
Q1 PNP Collector Current - Continuous IC -600 mA Q1-PNP, Note 5 2
Q2 NPN Collector-Base Voltage VCBO 80 V Q2-NPN 2
Q2 NPN Collector-Emitter Voltage VCEO 65 V Q2-NPN 2
Q2 NPN Emitter-Base Voltage VEBO 6 V Q2-NPN 2
Q2 NPN Collector Current - Continuous IC 500 mA Q2-NPN, Note 5 2
Q1 Collector-Base Breakdown Voltage V(BR)CBO -60 V IC = -10µA, IE = 0 2
Q1 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10mA, IB = 0 2
Q1 Emitter-Base Breakdown Voltage V(BR)EBO -5.5 V IE = -10µA, IC = 0 2
Q1 Collector Cutoff Current ICBO -10 nA VCB = -50V, IE = 0 2
Q1 Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(OFF) = 0.5V 2
Q1 Base Cutoff Current IBL -50 nA VCE = -30V, VEB(OFF) = -0.5V 2
Q1 DC Current Gain hFE 100 IC = -100µA, VCE = -10V 2
Q1 DC Current Gain hFE 50 IC = -500mA, VCE = -10V 2
Q1 Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -150mA, IB = -15mA 2
Q1 Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC = -500mA, IB = -50mA 2
Q1 Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC = -150mA, IB = -15mA 2
Q1 Base-Emitter Saturation Voltage VBE(sat) -1.3 V IC = -500mA, IB = -50mA 2
Q2 Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 100µA, IE = 0 3
Q2 Collector-Emitter Breakdown Voltage V(BR)CEO 65 V IC = 1mA, IB = 0 3
Q2 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 100µA, IC = 0 3
Q2 Collector-Base Cutoff Current ICBO 100 nA VCB = 80V, IE = 0 3
Q2 Collector Cutoff Current ICES 100 nA VCE = 90V, VBE = 0 3
Q2 Emitter-Base Cutoff Current IEBO 100 nA VEB = 5V, IC = 0 3
Q2 DC Current Gain hFE 250 VCE = 1V, IC = 10mA 3
Q2 DC Current Gain hFE 100 VCE = 1V, IC = 100mA 3
Q2 Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.4 V IC = 100mA, IB = 10mA 3
Q2 Base-Emitter Turn-on Voltage VBE(on) 0.7 0.75 0.8 V VCE = 1V, IC = 100mA 3
Q2 Base-Emitter Saturation Voltage VBE(sat) 0.95 V IC = 100mA, IB = 5mA 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminal Connections: See Schematic & Pin Configuration  Terminals: Finish, Matte Tin Annealed over Alloy 42 Leadframe. 1

CAD (KiCad official)

  • Symbol: HBDM60V600X-7
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: hbdm60v600x-7-etched.step / hbdm60v600x-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hbdm60v600x-7.step / hbdm60v600x-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (9 pp, sha256 bd191c7c6a7ab5ab, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF