BULN2803LVS from BORN, in a SOIC-18-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	1B	input	Channel 1 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
2	2B	input	Channel 2 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
3	3B	input	Channel 3 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
4	4B	input	Channel 4 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
5	5B	input	Channel 5 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
6	6B	input	Channel 6 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
7	7B	input	Channel 7 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
8	8B	input	Channel 8 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
9	GND	power_in	Common emitter shared by all channels, typically tied to ground.
10	COM	bidirectional	Common cathode node for the flyback clamp diodes, which the datasheet states is required for inductive loads.
11	8C	output	Channel 8 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
12	7C	output	Channel 7 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
13	6C	output	Channel 6 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
14	5C	output	Channel 5 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
15	4C	output	Channel 4 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
16	3C	output	Channel 3 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
17	2C	output	Channel 2 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
18	1C	output	Channel 1 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.

Key specifications

Parameter	Value
Manufacturer	BORN
Package	SOIC-18-300mil
Category	Transistors
Pins	18

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-emitter voltage	VCE			20	V	At 25°C free-air temperature unless otherwise noted	3
Input voltage	VI			20	V	At 25°C free-air temperature unless otherwise noted; with respect to emitter/substrate terminal E	3
Peak collector current	ICP			500	mA	At 25°C free-air temperature unless otherwise noted	3
Output clamp current	IOK			500	mA	At 25°C free-air temperature unless otherwise noted	3
Total substrate-terminal current	ITE			-2	A	At 25°C free-air temperature unless otherwise noted	3
Operating virtual junction temperature	TJ	-65		150	°C	At 25°C free-air temperature unless otherwise noted	3
Storage temperature range	TSTG	-65		150	°C		3
Human body model ESD rating	V(ESD)	-2000		2000	V	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001	3
Charged device model ESD rating	V(ESD)	-500		500	V	Charged device model (CDM), per JEDEC specification JESD22-C101	3
Collector-emitter voltage	V(CE)	0		18	V	Over operating free-air temperature range	3
Ambient temperature	T(A)	-40		85	°C	Over operating free-air temperature range	3
Junction-to-ambient thermal resistance	RθJA		66.4		°C/W	SOIC 18 pins	3
Junction-to-case (top) thermal resistance	RθJC(top)		29.5		°C/W	SOIC 18 pins	3
Junction-to-board thermal resistance	RθJB		33		°C/W	SOIC 18 pins	3
Junction-to-top characterization parameter	ψJT		6		°C/W	SOIC 18 pins	3
Junction-to-board characterization parameter	ψJB		32.5		°C/W	SOIC 18 pins	3
Input current-on	VI(on)		2	2.1	V	VCE = 1.5 V, IC = 100 mA	4
Input current-on	VI(on)		2.2	2.3	V	VCE = 1.5 V, IC = 200 mA	4
Collector-emitter saturation voltage	VCE(sat)		2	2.1	V	VI = 1.8 V, IC = 100 mA	4
Collector-emitter saturation voltage	VCE(sat)		3.2	3.3	V	VI = 1.8 V, IC = 200 mA	4
Collector-emitter saturation voltage	VCE(sat)		1.5	1.6	V	VI = 3.3 V, IC = 300 mA	4
Collector-emitter saturation voltage	VCE(sat)		1.8	1.9	V	VI = 3.3 V, IC = 500 mA	4
Clamp diode forward voltage	VF		1.4	1.6	V	IF = 350 mA	4
Output leakage current	ICEX			50	μA	VCE = 18 V, IIN = 0 V	4
Output leakage current	ICEX			100	μA	VIN = 0 V (Figure 2)	4
Input current	IIN		0.6	1.2	mA	VIN = 1.8 V, IC = 250 mA	4
Input current	IIN		1.6	3	mA	VIN = 2.4 V, IC = 250 mA	4
Input current	IIN		3.2	4.5	mA	VIN = 3.3 V, IC = 250 mA	4
Clamp reverse current	IR			100	μA	VR = 18 V	4

CAD (KiCad official)

Symbol: BULN2803LVS
Footprint: Package_SO:SOIC-18W_7.5x11.6mm_P1.27mm
3D model: SOIC-18-300mil (KiCad packages3D, STEP)
3D model files: buln2803lvs-etched.step / buln2803lvs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); buln2803lvs.step / buln2803lvs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: BORN datasheet (7 pp, sha256 a42e279e1b36096f, retrieved 2026-11-12, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BULN2803LVS

Verified BULN2803LVS

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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