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BULN2803LVS

BORN · Darlington Transistor Arrays · SOIC-18-300mil

BULN2803LVS from BORN, in a SOIC-18-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1B input Channel 1 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
2 2B input Channel 2 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
3 3B input Channel 3 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
4 4B input Channel 4 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
5 5B input Channel 5 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
6 6B input Channel 6 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
7 7B input Channel 7 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
8 8B input Channel 8 Darlington base input, which the datasheet states supports 1.8 V low-voltage input and TTL/CMOS logic signals.
9 GND power_in Common emitter shared by all channels, typically tied to ground.
10 COM bidirectional Common cathode node for the flyback clamp diodes, which the datasheet states is required for inductive loads.
11 8C output Channel 8 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
12 7C output Channel 7 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
13 6C output Channel 6 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
14 5C output Channel 5 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
15 4C output Channel 4 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
16 3C output Channel 3 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
17 2C output Channel 2 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.
18 1C output Channel 1 Darlington collector output, rated at 500 mA per pair with a 20 V collector-to-emitter maximum.

Key specifications

Parameter Value
Manufacturer BORN
Package SOIC-18-300mil
Category Transistors
Pins 18

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 20 V At 25°C free-air temperature unless otherwise noted 3
Input voltage VI 20 V At 25°C free-air temperature unless otherwise noted; with respect to emitter/substrate terminal E 3
Peak collector current ICP 500 mA At 25°C free-air temperature unless otherwise noted 3
Output clamp current IOK 500 mA At 25°C free-air temperature unless otherwise noted 3
Total substrate-terminal current ITE -2 A At 25°C free-air temperature unless otherwise noted 3
Operating virtual junction temperature TJ -65 150 °C At 25°C free-air temperature unless otherwise noted 3
Storage temperature range TSTG -65 150 °C 3
Human body model ESD rating V(ESD) -2000 2000 V Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 3
Charged device model ESD rating V(ESD) -500 500 V Charged device model (CDM), per JEDEC specification JESD22-C101 3
Collector-emitter voltage V(CE) 0 18 V Over operating free-air temperature range 3
Ambient temperature T(A) -40 85 °C Over operating free-air temperature range 3
Junction-to-ambient thermal resistance RθJA 66.4 °C/W SOIC 18 pins 3
Junction-to-case (top) thermal resistance RθJC(top) 29.5 °C/W SOIC 18 pins 3
Junction-to-board thermal resistance RθJB 33 °C/W SOIC 18 pins 3
Junction-to-top characterization parameter ψJT 6 °C/W SOIC 18 pins 3
Junction-to-board characterization parameter ψJB 32.5 °C/W SOIC 18 pins 3
Input current-on VI(on) 2 2.1 V VCE = 1.5 V, IC = 100 mA 4
Input current-on VI(on) 2.2 2.3 V VCE = 1.5 V, IC = 200 mA 4
Collector-emitter saturation voltage VCE(sat) 2 2.1 V VI = 1.8 V, IC = 100 mA 4
Collector-emitter saturation voltage VCE(sat) 3.2 3.3 V VI = 1.8 V, IC = 200 mA 4
Collector-emitter saturation voltage VCE(sat) 1.5 1.6 V VI = 3.3 V, IC = 300 mA 4
Collector-emitter saturation voltage VCE(sat) 1.8 1.9 V VI = 3.3 V, IC = 500 mA 4
Clamp diode forward voltage VF 1.4 1.6 V IF = 350 mA 4
Output leakage current ICEX 50 μA VCE = 18 V, IIN = 0 V 4
Output leakage current ICEX 100 μA VIN = 0 V (Figure 2) 4
Input current IIN 0.6 1.2 mA VIN = 1.8 V, IC = 250 mA 4
Input current IIN 1.6 3 mA VIN = 2.4 V, IC = 250 mA 4
Input current IIN 3.2 4.5 mA VIN = 3.3 V, IC = 250 mA 4
Clamp reverse current IR 100 μA VR = 18 V 4

CAD (KiCad official)

  • Symbol: BULN2803LVS
  • Footprint: Package_SO:SOIC-18W_7.5x11.6mm_P1.27mm
  • 3D model: SOIC-18-300mil (KiCad packages3D, STEP)
  • 3D model files: buln2803lvs-etched.step / buln2803lvs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); buln2803lvs.step / buln2803lvs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BORN datasheet (7 pp, sha256 a42e279e1b36096f, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF