component
FQPF4N90C
Public Made by Adomby adom
onsemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFQPF4N90C
onsemi · MOSFETs · TO-220F-3
FQPF4N90C from onsemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate drives the device; gate-source voltage is rated at ±30 V (VGSS) and the gate threshold VGS(th) is 3.0 V minimum to 5.0 V maximum. |
| 2 | D | passive | Drain is the high-voltage MOSFET terminal rated for 900 V drain-source breakdown (BVDSS), with 4 A continuous drain current at TC = 25°C and 16 A pulsed. |
| 3 | S | passive | Source is the reference terminal for VGSS and the body diode, rated at 4 A continuous and 16 A pulsed drain-source diode forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 900 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 900 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (TC = 125°C) | IDSS | 100 | µA | VDS = 720 V, TC = 125°C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 3.5 | 4.2 | Ω | VGS = 10 V, ID = 2 A | 2 | |
| Input Capacitance | Ciss | 740 | 960 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | |
| Output Capacitance | Coss | 65 | 85 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 5.6 | 7.3 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | |
| Turn-On Delay Time | td(on) | 25 | 60 | ns | VDD = 450 V, ID = 4 A, RG = 25 Ω | 2 | |
| Turn-On Rise Time | tr | 50 | 110 | ns | VDD = 450 V, ID = 4 A, RG = 25 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 40 | 90 | ns | VDD = 450 V, ID = 4 A, RG = 25 Ω | 2 | |
| Turn-Off Fall Time | tf | 35 | 80 | ns | VDD = 450 V, ID = 4 A, RG = 25 Ω | 2 | |
| Total Gate Charge | Qg | 17 | 22 | nC | VDS = 720 V, ID = 4 A, VGS = 10 V | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 4 A | 2 | ||
| Drain-Source Voltage | VDSS | 900 | V | 1 | |||
| Drain Current - Continuous | ID | 4 | A | TC = 25°C; drain current limited by maximum junction temperature | 1 | ||
| Drain Current - Continuous | ID | 2.3 | A | TC = 100°C | 1 | ||
| Drain Current - Pulsed | IDM | 16 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 570 | mJ | Note 2 | 1 | ||
| Avalanche Current | IAR | 4 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 14 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 1 | ||
| Power Dissipation | PD | 47 | W | TC = 25°C (FQPF4N90C column) | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.66 | °C/W | FQPF4N90C column; Zθjc(t) note on page 5 states Max. | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | FQPF4N90C column | 1 |
CAD (KiCad official)
- Symbol:
FQPF4N90C - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
fec433c6f678d3de, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).