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FQPF4N90C

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onsemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQPF4N90C

onsemi · MOSFETs · TO-220F-3

FQPF4N90C from onsemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate drives the device; gate-source voltage is rated at ±30 V (VGSS) and the gate threshold VGS(th) is 3.0 V minimum to 5.0 V maximum.
2 D passive Drain is the high-voltage MOSFET terminal rated for 900 V drain-source breakdown (BVDSS), with 4 A continuous drain current at TC = 25°C and 16 A pulsed.
3 S passive Source is the reference terminal for VGSS and the body diode, rated at 4 A continuous and 16 A pulsed drain-source diode forward current.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 900 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 900 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TC = 125°C) IDSS 100 µA VDS = 720 V, TC = 125°C 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 µA 2
Static Drain-Source On-Resistance RDS(on) 3.5 4.2 Ω VGS = 10 V, ID = 2 A 2
Input Capacitance Ciss 740 960 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 65 85 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 5.6 7.3 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 25 60 ns VDD = 450 V, ID = 4 A, RG = 25 Ω 2
Turn-On Rise Time tr 50 110 ns VDD = 450 V, ID = 4 A, RG = 25 Ω 2
Turn-Off Delay Time td(off) 40 90 ns VDD = 450 V, ID = 4 A, RG = 25 Ω 2
Turn-Off Fall Time tf 35 80 ns VDD = 450 V, ID = 4 A, RG = 25 Ω 2
Total Gate Charge Qg 17 22 nC VDS = 720 V, ID = 4 A, VGS = 10 V 2
Maximum Continuous Drain-Source Diode Forward Current IS 4 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 16 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 4 A 2
Drain-Source Voltage VDSS 900 V 1
Drain Current - Continuous ID 4 A TC = 25°C; drain current limited by maximum junction temperature 1
Drain Current - Continuous ID 2.3 A TC = 100°C 1
Drain Current - Pulsed IDM 16 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 570 mJ Note 2 1
Avalanche Current IAR 4 A Note 1 1
Repetitive Avalanche Energy EAR 14 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 1
Power Dissipation PD 47 W TC = 25°C (FQPF4N90C column) 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Lead Temperature for Soldering TL 300 °C 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 2.66 °C/W FQPF4N90C column; Zθjc(t) note on page 5 states Max. 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W FQPF4N90C column 1

CAD (KiCad official)

  • Symbol: FQPF4N90C
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 fec433c6f678d3de, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF