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MMDT3946
Public Made by Adomby adom
Slkor SLKORMICRO Elec Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMDT3946
Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-363
MMDT3946 from Slkor SLKORMICRO Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of transistor 2 (the NPN 3904-type device in the drawing); NPN section ratings are VCEO 40 V, VCBO 60 V, VEBO 6 V, IC 0.2 A. |
| 2 | B2 | input | Base of transistor 2 (the NPN 3904-type device in the drawing); NPN section ratings are VCEO 40 V, VCBO 60 V, VEBO 6 V, IC 0.2 A. |
| 3 | C1 | passive | Collector of transistor 1 (the PNP 3906-type device in the drawing); PNP section ratings are VCEO -40 V, VCBO -40 V, VEBO -5.0 V, IC -0.2 A. |
| 4 | E1 | passive | Emitter of transistor 1 (the PNP 3906-type device in the drawing); PNP section ratings are VCEO -40 V, VCBO -40 V, VEBO -5.0 V, IC -0.2 A. |
| 5 | B1 | input | Base of transistor 1 (the PNP 3906-type device in the drawing); PNP section ratings are VCEO -40 V, VCBO -40 V, VEBO -5.0 V, IC -0.2 A. |
| 6 | C2 | passive | Collector of transistor 2 (the NPN 3904-type device in the drawing); NPN section ratings are VCEO 40 V, VCBO 60 V, VEBO 6 V, IC 0.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN: Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=10μA,IE=0 | 2 | ||
| NPN: Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=1mA,IB=0 | 2 | ||
| NPN: Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10μA,IC=0 | 2 | ||
| NPN: Collector cut-off current | ICEX | 50 | nA | VCE=30V, VEB(OFF)=3.0V | 2 | ||
| NPN: Base cut-off current | IBL | 50 | nA | VCE=30V, VEB(OFF)=3.0V | 2 | ||
| NPN: DC current gain | hFE | 40 | VCE=1V, IC=0.1mA | 2 | |||
| NPN: DC current gain | hFE | 70 | VCE=1V, IC=1mA | 2 | |||
| NPN: DC current gain | hFE | 100 | 300 | VCE=1V, IC=10mA | 2 | ||
| NPN: DC current gain | hFE | 60 | VCE=1V, IC=50mA | 2 | |||
| NPN: DC current gain | hFE | 30 | VCE=1V, IC=100mA | 2 | |||
| NPN: Collector-emitter saturation voltage | VCE(sat) | 200 | mV | IC=10mA, IB=1.0mA | 2 | ||
| NPN: Collector-emitter saturation voltage | VCE(sat) | 300 | mV | IC=50mA, IB=5mA | 2 | ||
| NPN: Base-emitter saturation voltage | VBE(sat) | 650 | 850 | mV | IC=10mA, IB=1mA | 2 | |
| NPN: Base-emitter saturation voltage | VBE(sat) | 950 | mV | IC=50mA, IB=5mA | 2 | ||
| NPN: Output capacitance | Cobo | 4 | pF | IE=0, VCB=5V; f=1MHz | 2 | ||
| NPN: Input capacitance | Cobi | 8 | pF | IC=0, VEB=0.5V; f=1MHz | 2 | ||
| NPN: Transition frequency | fT | 300 | MHz | IC=20mA, VCE=20V, f=100MHz | 2 | ||
| NPN: Noise figure | NF | 5 | dB | IC=0.1mA, VCE=5V, RS=1kΩ, f=1kHz | 2 | ||
| NPN: Delay time | td | 35 | ns | 2 | |||
| NPN: Rise time | tr | 35 | ns | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=IB2=1mA | 2 | ||
| NPN: Storage time | ts | 200 | ns | 2 | |||
| NPN: Fall time | tf | 50 | ns | VCC=3V, IC=10mA, IB1=IB2=1mA | 2 | ||
| PNP: Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-10μA,IE=0 | 3 | ||
| PNP: Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mA,IB=0 | 3 | ||
| PNP: Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10μA,IC=0 | 3 | ||
| PNP: Collector cut-off current | ICEX | -0.05 | μA | VCE=-30V, VEB(OFF)=-3.0V | 3 | ||
| PNP: Base cut-off current | IBL | -0.05 | μA | VCE=-30V, VEB(OFF)=-3.0V | 3 | ||
| PNP: DC current gain | hFE | 60 | VCE=-1V, IC=-0.1mA | 3 | |||
| PNP: DC current gain | hFE | 80 | VCE=-1V, IC=-1mA | 3 | |||
| PNP: DC current gain | hFE | 100 | 300 | VCE=-1V, IC=-10mA | 3 | ||
| PNP: DC current gain | hFE | 30 | VCE=-1V, IC=-100mA | 3 | |||
| PNP: Collector-emitter saturation voltage | VCE(sat) | -250 | mV | IC=-10mA, IB=-1mA | 3 | ||
| PNP: Collector-emitter saturation voltage | VCE(sat) | -400 | mV | IC=-50mA, IB=-5mA | 3 | ||
| PNP: Base-emitter saturation voltage | VBE(sat) | -650 | -850 | mV | IC=-10mA, IB=-1mA | 3 | |
| PNP: Base-emitter saturation voltage | VBE(sat) | -950 | mV | IC=-50mA, IB=-5mA | 3 | ||
| PNP: Output capacitance | Cobo | 4.5 | pF | IE=0, VCB=-5V; f=1MHz | 3 | ||
| PNP: Input capacitance | Cobi | 10 | pF | IC=0, VEB=-0.5V; f=1MHz | 3 | ||
| PNP: Transition frequency | fT | 250 | MHz | IC=-10mA, VCE=-20V, f=100MHz | 3 | ||
| PNP: Noise figure | NF | 4 | dB | IC=-0.1mA, VCE=-5V, RS=1.0kΩ, f=1.0kHz | 3 | ||
| PNP: Delay time | td | 35 | ns | 3 | |||
| PNP: Rise time | tr | 35 | ns | VCC=-3V, VBE(off)=0.5V, IC=-10mA, IB1=-IB2=-1mA | 3 | ||
| PNP: Storage time | ts | 225 | ns | 3 | |||
| PNP: Fall time | tf | 75 | ns | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 3 | ||
| NPN: Collector-base voltage (absolute maximum) | VCBO | 60 | V | Ta=25℃ | 1 | ||
| NPN: Collector-emitter voltage (absolute maximum) | VCEO | 40 | V | Ta=25℃ | 1 | ||
| NPN: Emitter-base voltage (absolute maximum) | VEBO | 6 | V | Ta=25℃ | 1 | ||
| NPN: Collector current, continuous (absolute maximum) | IC | 0.2 | A | Ta=25℃ | 1 | ||
| NPN: Power dissipation (absolute maximum) | PD | 0.2 | W | Ta=25℃ | 1 | ||
| PNP: Collector-base voltage (absolute maximum) | VCBO | -40 | V | Ta=25℃ | 1 | ||
| PNP: Collector-emitter voltage (absolute maximum) | VCEO | -40 | V | Ta=25℃ | 1 | ||
| PNP: Emitter-base voltage (absolute maximum) | VEBO | -5 | V | Ta=25℃ | 1 | ||
| PNP: Collector current, continuous (absolute maximum) | IC | -0.2 | A | Ta=25℃ | 1 | ||
| PNP: Power dissipation (absolute maximum) | PD | 0.2 | W | Ta=25℃ | 1 | ||
| Thermal resistance, junction to ambient (NPN and PNP sections) | RθJA | 625 | ℃/W | Ta=25℃ | 1 |
CAD (KiCad official)
- Symbol:
MMDT3946 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt3946-etched.step/mmdt3946-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt3946.step/mmdt3946.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (5 pp, sha256
1a0c46ee38efdb3b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).