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MMDT3946

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Slkor SLKORMICRO Elec Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT3946

Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-363

MMDT3946 from Slkor SLKORMICRO Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor 2 (the NPN 3904-type device in the drawing); NPN section ratings are VCEO 40 V, VCBO 60 V, VEBO 6 V, IC 0.2 A.
2 B2 input Base of transistor 2 (the NPN 3904-type device in the drawing); NPN section ratings are VCEO 40 V, VCBO 60 V, VEBO 6 V, IC 0.2 A.
3 C1 passive Collector of transistor 1 (the PNP 3906-type device in the drawing); PNP section ratings are VCEO -40 V, VCBO -40 V, VEBO -5.0 V, IC -0.2 A.
4 E1 passive Emitter of transistor 1 (the PNP 3906-type device in the drawing); PNP section ratings are VCEO -40 V, VCBO -40 V, VEBO -5.0 V, IC -0.2 A.
5 B1 input Base of transistor 1 (the PNP 3906-type device in the drawing); PNP section ratings are VCEO -40 V, VCBO -40 V, VEBO -5.0 V, IC -0.2 A.
6 C2 passive Collector of transistor 2 (the NPN 3904-type device in the drawing); NPN section ratings are VCEO 40 V, VCBO 60 V, VEBO 6 V, IC 0.2 A.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN: Collector-base breakdown voltage V(BR)CBO 60 V IC=10μA,IE=0 2
NPN: Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA,IB=0 2
NPN: Emitter-base breakdown voltage V(BR)EBO 5 V IE=10μA,IC=0 2
NPN: Collector cut-off current ICEX 50 nA VCE=30V, VEB(OFF)=3.0V 2
NPN: Base cut-off current IBL 50 nA VCE=30V, VEB(OFF)=3.0V 2
NPN: DC current gain hFE 40 VCE=1V, IC=0.1mA 2
NPN: DC current gain hFE 70 VCE=1V, IC=1mA 2
NPN: DC current gain hFE 100 300 VCE=1V, IC=10mA 2
NPN: DC current gain hFE 60 VCE=1V, IC=50mA 2
NPN: DC current gain hFE 30 VCE=1V, IC=100mA 2
NPN: Collector-emitter saturation voltage VCE(sat) 200 mV IC=10mA, IB=1.0mA 2
NPN: Collector-emitter saturation voltage VCE(sat) 300 mV IC=50mA, IB=5mA 2
NPN: Base-emitter saturation voltage VBE(sat) 650 850 mV IC=10mA, IB=1mA 2
NPN: Base-emitter saturation voltage VBE(sat) 950 mV IC=50mA, IB=5mA 2
NPN: Output capacitance Cobo 4 pF IE=0, VCB=5V; f=1MHz 2
NPN: Input capacitance Cobi 8 pF IC=0, VEB=0.5V; f=1MHz 2
NPN: Transition frequency fT 300 MHz IC=20mA, VCE=20V, f=100MHz 2
NPN: Noise figure NF 5 dB IC=0.1mA, VCE=5V, RS=1kΩ, f=1kHz 2
NPN: Delay time td 35 ns 2
NPN: Rise time tr 35 ns VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=IB2=1mA 2
NPN: Storage time ts 200 ns 2
NPN: Fall time tf 50 ns VCC=3V, IC=10mA, IB1=IB2=1mA 2
PNP: Collector-base breakdown voltage V(BR)CBO -40 V IC=-10μA,IE=0 3
PNP: Collector-emitter breakdown voltage V(BR)CEO -40 V IC=-1mA,IB=0 3
PNP: Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10μA,IC=0 3
PNP: Collector cut-off current ICEX -0.05 μA VCE=-30V, VEB(OFF)=-3.0V 3
PNP: Base cut-off current IBL -0.05 μA VCE=-30V, VEB(OFF)=-3.0V 3
PNP: DC current gain hFE 60 VCE=-1V, IC=-0.1mA 3
PNP: DC current gain hFE 80 VCE=-1V, IC=-1mA 3
PNP: DC current gain hFE 100 300 VCE=-1V, IC=-10mA 3
PNP: DC current gain hFE 30 VCE=-1V, IC=-100mA 3
PNP: Collector-emitter saturation voltage VCE(sat) -250 mV IC=-10mA, IB=-1mA 3
PNP: Collector-emitter saturation voltage VCE(sat) -400 mV IC=-50mA, IB=-5mA 3
PNP: Base-emitter saturation voltage VBE(sat) -650 -850 mV IC=-10mA, IB=-1mA 3
PNP: Base-emitter saturation voltage VBE(sat) -950 mV IC=-50mA, IB=-5mA 3
PNP: Output capacitance Cobo 4.5 pF IE=0, VCB=-5V; f=1MHz 3
PNP: Input capacitance Cobi 10 pF IC=0, VEB=-0.5V; f=1MHz 3
PNP: Transition frequency fT 250 MHz IC=-10mA, VCE=-20V, f=100MHz 3
PNP: Noise figure NF 4 dB IC=-0.1mA, VCE=-5V, RS=1.0kΩ, f=1.0kHz 3
PNP: Delay time td 35 ns 3
PNP: Rise time tr 35 ns VCC=-3V, VBE(off)=0.5V, IC=-10mA, IB1=-IB2=-1mA 3
PNP: Storage time ts 225 ns 3
PNP: Fall time tf 75 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA 3
NPN: Collector-base voltage (absolute maximum) VCBO 60 V Ta=25℃ 1
NPN: Collector-emitter voltage (absolute maximum) VCEO 40 V Ta=25℃ 1
NPN: Emitter-base voltage (absolute maximum) VEBO 6 V Ta=25℃ 1
NPN: Collector current, continuous (absolute maximum) IC 0.2 A Ta=25℃ 1
NPN: Power dissipation (absolute maximum) PD 0.2 W Ta=25℃ 1
PNP: Collector-base voltage (absolute maximum) VCBO -40 V Ta=25℃ 1
PNP: Collector-emitter voltage (absolute maximum) VCEO -40 V Ta=25℃ 1
PNP: Emitter-base voltage (absolute maximum) VEBO -5 V Ta=25℃ 1
PNP: Collector current, continuous (absolute maximum) IC -0.2 A Ta=25℃ 1
PNP: Power dissipation (absolute maximum) PD 0.2 W Ta=25℃ 1
Thermal resistance, junction to ambient (NPN and PNP sections) RθJA 625 ℃/W Ta=25℃ 1

CAD (KiCad official)

  • Symbol: MMDT3946
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt3946-etched.step / mmdt3946-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3946.step / mmdt3946.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (5 pp, sha256 1a0c46ee38efdb3b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF