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STC6614
Public Made by Adomby adom
STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTC6614
STANSON Tech · MOSFETs · SOP-8
STC6614 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel per schematic symbol, 60V, 7.0A continuous at TA=25°C). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), gate-source voltage rated ±20V with threshold 1.0V to 3.0V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel per schematic symbol, -60V, -5.0A continuous at TA=25°C). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), gate-source voltage rated ±20V with threshold -1.0V to -3.0V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), drain-source voltage rated -60V, pulsed drain current -30A; pins 5 and 6 are both D2. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), drain-source voltage rated -60V, pulsed drain current -30A; pins 5 and 6 are both D2. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), drain-source voltage rated 60V, pulsed drain current 40A; pins 7 and 8 are both D1. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), drain-source voltage rated 60V, pulsed drain current 40A; pins 7 and 8 are both D1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDSS | 60 | V | 2 | |||
| Drain-Source Voltage (P-channel) | VDSS | -60 | V | 2 | |||
| Gate-Source Voltage (N-channel) | VGSS | -20 | 20 | V | 2 | ||
| Gate-Source Voltage (P-channel) | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (N-channel) | ID | 7 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current (N-channel) | ID | 5.2 | A | TJ=150℃, TA=70℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -5 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current (P-channel) | ID | -4 | A | TJ=150℃, TA=70℃ | 2 | ||
| Pulsed Drain Current (N-channel) | IDM | 40 | A | 2 | |||
| Pulsed Drain Current (P-channel) | IDM | -30 | A | 2 | |||
| Continuous Source Current (Diode Conduction) (N-channel) | IS | 3 | A | 2 | |||
| Continuous Source Current (Diode Conduction) (P-channel) | IS | -3 | A | 2 | |||
| Power Dissipation (N-channel) | PD | 2.3 | W | TA=25℃ | 2 | ||
| Power Dissipation (N-channel) | PD | 1.3 | W | TA=70℃ | 2 | ||
| Power Dissipation (P-channel) | PD | 2.3 | W | TA=25℃ | 2 | ||
| Power Dissipation (P-channel) | PD | 1.3 | W | TA=70℃ | 2 | ||
| Operation Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage (N-channel) | V(BR)DSS | 60 | V | VGS=0V,ID=250uA | 3 | ||
| Drain-Source Breakdown Voltage (P-channel) | V(BR)DSS | -60 | V | VGS=0V,ID=-250uA | 3 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 3 | V | VDS=VGS,ID=250 uA | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -3 | V | VDS=VGS,ID=-250uA | 3 | |
| Gate Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VDS=0V,VGS=±20V | 3 | |
| Gate Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VDS=0V,VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | uA | TJ=55℃; VDS=48V,VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | uA | TJ=55℃; VDS=-48V,VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 5 | uA | VDS=48V,VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -5 | uA | VDS=-48V,VGS=0V | 3 | ||
| On-State Drain Current (N-channel) | ID(on) | 20 | A | VDS≧5V,VGS=10V | 3 | ||
| On-State Drain Current (P-channel) | ID(on) | -20 | A | VDS≦-5V,VGS=-10V | 3 | ||
| Drain-source On-Resistance (N-channel) | RDS(on) | 0.04 | Ω | VGS=10V, ID=10.0A | 3 | ||
| Drain-source On-Resistance (P-channel) | RDS(on) | 0.072 | Ω | VGS=-10V,ID=-10.0A | 3 | ||
| Drain-source On-Resistance (N-channel) | RDS(on) | 0.048 | Ω | VGS=4.5V, ID=6.0A | 3 | ||
| Drain-source On-Resistance (P-channel) | RDS(on) | 0.093 | Ω | VGS=-4.5V,ID=-5.0 A | 3 | ||
| Diode Forward Voltage (N-channel) | VSD | 1.2 | V | IS=1.0A,VGS=0V | 3 | ||
| Diode Forward Voltage (P-channel) | VSD | -1.2 | V | IS=-1.7A,VGS=0V | 3 | ||
| Thermal Resistance Junction to Ambient (N-channel) | RθJA | 62.5 | ℃/W | T≤10Sec | 2 | ||
| Thermal Resistance Junction to Ambient (N-channel) | RθJA | 110 | ℃/W | Steady state | 2 | ||
| Thermal Resistance Junction to Ambient (P-channel) | RθJA | 62.5 | ℃/W | T≤10Sec | 2 | ||
| Thermal Resistance Junction to Ambient (P-channel) | RθJA | 110 | ℃/W | Steady state | 2 |
CAD (KiCad official)
- Symbol:
STC6614 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stc6614-etched.step/stc6614-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stc6614.step/stc6614.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (8 pp, sha256
bb760e7713271411, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).