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STC6614

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STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STC6614

STANSON Tech · MOSFETs · SOP-8

STC6614 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel per schematic symbol, 60V, 7.0A continuous at TA=25°C).
2 G1 input Gate of MOSFET 1 (N-channel), gate-source voltage rated ±20V with threshold 1.0V to 3.0V.
3 S2 passive Source of MOSFET 2 (P-channel per schematic symbol, -60V, -5.0A continuous at TA=25°C).
4 G2 input Gate of MOSFET 2 (P-channel), gate-source voltage rated ±20V with threshold -1.0V to -3.0V.
5 D2 passive Drain of MOSFET 2 (P-channel), drain-source voltage rated -60V, pulsed drain current -30A; pins 5 and 6 are both D2.
6 D2 passive Drain of MOSFET 2 (P-channel), drain-source voltage rated -60V, pulsed drain current -30A; pins 5 and 6 are both D2.
7 D1 passive Drain of MOSFET 1 (N-channel), drain-source voltage rated 60V, pulsed drain current 40A; pins 7 and 8 are both D1.
8 D1 passive Drain of MOSFET 1 (N-channel), drain-source voltage rated 60V, pulsed drain current 40A; pins 7 and 8 are both D1.

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDSS 60 V 2
Drain-Source Voltage (P-channel) VDSS -60 V 2
Gate-Source Voltage (N-channel) VGSS -20 20 V 2
Gate-Source Voltage (P-channel) VGSS -20 20 V 2
Continuous Drain Current (N-channel) ID 7 A TJ=150℃, TA=25℃ 2
Continuous Drain Current (N-channel) ID 5.2 A TJ=150℃, TA=70℃ 2
Continuous Drain Current (P-channel) ID -5 A TJ=150℃, TA=25℃ 2
Continuous Drain Current (P-channel) ID -4 A TJ=150℃, TA=70℃ 2
Pulsed Drain Current (N-channel) IDM 40 A 2
Pulsed Drain Current (P-channel) IDM -30 A 2
Continuous Source Current (Diode Conduction) (N-channel) IS 3 A 2
Continuous Source Current (Diode Conduction) (P-channel) IS -3 A 2
Power Dissipation (N-channel) PD 2.3 W TA=25℃ 2
Power Dissipation (N-channel) PD 1.3 W TA=70℃ 2
Power Dissipation (P-channel) PD 2.3 W TA=25℃ 2
Power Dissipation (P-channel) PD 1.3 W TA=70℃ 2
Operation Junction Temperature TJ 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Drain-Source Breakdown Voltage (N-channel) V(BR)DSS 60 V VGS=0V,ID=250uA 3
Drain-Source Breakdown Voltage (P-channel) V(BR)DSS -60 V VGS=0V,ID=-250uA 3
Gate Threshold Voltage (N-channel) VGS(th) 1 3 V VDS=VGS,ID=250 uA 3
Gate Threshold Voltage (P-channel) VGS(th) -1 -3 V VDS=VGS,ID=-250uA 3
Gate Leakage Current (N-channel) IGSS -100 100 nA VDS=0V,VGS=±20V 3
Gate Leakage Current (P-channel) IGSS -100 100 nA VDS=0V,VGS=±20V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 1 uA TJ=55℃; VDS=48V,VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -1 uA TJ=55℃; VDS=-48V,VGS=0V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 5 uA VDS=48V,VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -5 uA VDS=-48V,VGS=0V 3
On-State Drain Current (N-channel) ID(on) 20 A VDS≧5V,VGS=10V 3
On-State Drain Current (P-channel) ID(on) -20 A VDS≦-5V,VGS=-10V 3
Drain-source On-Resistance (N-channel) RDS(on) 0.04 Ω VGS=10V, ID=10.0A 3
Drain-source On-Resistance (P-channel) RDS(on) 0.072 Ω VGS=-10V,ID=-10.0A 3
Drain-source On-Resistance (N-channel) RDS(on) 0.048 Ω VGS=4.5V, ID=6.0A 3
Drain-source On-Resistance (P-channel) RDS(on) 0.093 Ω VGS=-4.5V,ID=-5.0 A 3
Diode Forward Voltage (N-channel) VSD 1.2 V IS=1.0A,VGS=0V 3
Diode Forward Voltage (P-channel) VSD -1.2 V IS=-1.7A,VGS=0V 3
Thermal Resistance Junction to Ambient (N-channel) RθJA 62.5 ℃/W T≤10Sec 2
Thermal Resistance Junction to Ambient (N-channel) RθJA 110 ℃/W Steady state 2
Thermal Resistance Junction to Ambient (P-channel) RθJA 62.5 ℃/W T≤10Sec 2
Thermal Resistance Junction to Ambient (P-channel) RθJA 110 ℃/W Steady state 2

CAD (KiCad official)

  • Symbol: STC6614
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stc6614-etched.step / stc6614-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stc6614.step / stc6614.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (8 pp, sha256 bb760e7713271411, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF