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SI2377EDS-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI2377EDS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2377EDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for a gate-source voltage of ±8 V (absolute maximum).
2 S passive Source of the P-channel MOSFET; continuous source-drain diode current is limited to -1.5 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET, rated for -20 V drain-source voltage and -4.4 A continuous drain current at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -6 6 µA VDS = 0 V, VGS = ± 8 V 2
Gate-Source Leakage IGSS -0.5 0.5 µA VDS = 0 V, VGS = ± 4.5 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -15 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.05 0.061 Ω VGS = -4.5 V, ID = -3.2 A 2
Drain-Source On-State Resistance RDS(on) 0.065 0.08 Ω VGS = -2.5 V, ID = -2.8 A 2
Drain-Source On-State Resistance RDS(on) 0.09 0.11 Ω VGS = -1.8 V, ID = -1.5 A 2
Drain-Source On-State Resistance RDS(on) 0.11 0.165 Ω VGS = -1.5 V, ID = -0.5 A 2
Total Gate Charge Qg 14 21 nC VDS = -10 V, VGS = -8 V, ID = -5.3 A 2
Total Gate Charge Qg 7.6 12 nC VDS = -10 V, VGS = -4.5 V, ID = -5.3 A 2
Gate Resistance Rg 0.4 2 4 kΩ f = 1 MHz 2
Turn-On Delay Time td(on) 0.2 0.3 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 1 1.5 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 4 6 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 2 3 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 0.09 0.14 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Rise Time tr 0.4 0.6 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 5.2 7.8 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Fall Time tf 2.3 3.5 µs VDD = -10 V, RL = 2.3 Ω, ID ≅ -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 30 60 ns IF = -3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 20 40 nC 2
Continuous Source-Drain Diode Current IS -1.5 A TC = 25 °C 2
Pulse Diode Forward Current ISM -20 A 2
VDS Temperature Coefficient ΔVDS/TJ -13 mV/°C ID = -250 µA 2
Forward Transconductance gfs 12 S VDS = -10 V, ID = -3.2 A 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.5 mV/°C 2
Gate-Source Charge Qgs 0.8 nC 2
Gate-Drain Charge Qgd 3.1 nC 2
Reverse Recovery Fall Time ta 13 ns 2
Reverse Recovery Rise Time tb 17 ns 2
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -4.4 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -3.5 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -3.7 A TJ = 150 °C, TA = 25 °C (notes b, c) 1
Continuous Drain Current ID -2.9 A TJ = 150 °C, TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -20 A 1
Continuous Source-Drain Diode Current IS -1.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.8 W TC = 25 °C 1
Maximum Power Dissipation PD 1.1 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature (notes d, e) 1
Maximum Junction-to-Ambient RthJA 80 100 °C/W t ≤ 5 s (notes b, d) 1
Maximum Junction-to-Ambient (steady state) RthJA 130 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 55 70 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: SI2377EDS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2377eds-t1-ge3-etched.step / si2377eds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2377eds-t1-ge3.step / si2377eds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 9ac5aa85976cbb4c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF