component

DTD123TCHZGT116

Public Made by Adom

by adom

ROHM Semicon Digital Transistors, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdtd123tchzgt116factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

DTD123TCHZGT116

ROHM Semicon · Digital Transistors · TO-236-3(SOT-23-3)

DTD123TCHZGT116 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter of the built-in NPN transistor; VEBO max 5 V and BVEBO min 5 V at IE = 50µA.
2 BASE input Base input through built-in series resistor R1 = 2.2kΩ (1.54 to 2.86kΩ), so no external input resistor is needed for inverter use.
3 COLLECTOR passive Collector of the built-in NPN transistor; VCEO 40 V, VCBO 50 V, IC max 500 mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-236-3(SOT-23-3)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 50 V IC = 50μA 2
Collector-emitter breakdown voltage BVCEO 40 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 5 V IE = 50μA 2
Collector cut-off current ICBO 500 nA VCB = 50V 2
Emitter cut-off current IEBO 500 nA VEB = 4V 2
Collector-emitter saturation voltage VCE(sat) 300 mV IC = 50mA, IB = 2.5mA 2
DC current gain hFE 100 250 600 - VCE = 5V, IC = 50mA; pulsed 2
Input resistance (built-in bias resistor R1) R1 1.54 2.2 2.86 kΩ 2
Collector-base voltage VCBO 50 V 2
Collector-emitter voltage VCEO 40 V 2
Emitter-base voltage VEBO 5 V 2
Collector current IC 500 mA 2
Power dissipation PD 200 mW Each terminal mounted on a reference land 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: DTD123TCHZGT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: dtd123tchzgt116-etched.step / dtd123tchzgt116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dtd123tchzgt116.step / dtd123tchzgt116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (6 pp, sha256 f64432cd0890d6c6, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF