component
DTD123TCHZGT116
Public Made by Adomby adom
ROHM Semicon Digital Transistors, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| dtd123tchzgt116-etched.glb | 13d ago |
| dtd123tchzgt116-etched.step | 13d ago |
| dtd123tchzgt116-hero.glb | 13d ago |
| dtd123tchzgt116-hero.overlay.json | 13d ago |
| dtd123tchzgt116.glb | 13d ago |
| dtd123tchzgt116.kicad_mod | 13d ago |
| dtd123tchzgt116.kicad_sym | 13d ago |
| dtd123tchzgt116.lbr | 13d ago |
| dtd123tchzgt116.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
DTD123TCHZGT116
ROHM Semicon · Digital Transistors · TO-236-3(SOT-23-3)
DTD123TCHZGT116 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the built-in NPN transistor; VEBO max 5 V and BVEBO min 5 V at IE = 50µA. |
| 2 | BASE | input | Base input through built-in series resistor R1 = 2.2kΩ (1.54 to 2.86kΩ), so no external input resistor is needed for inverter use. |
| 3 | COLLECTOR | passive | Collector of the built-in NPN transistor; VCEO 40 V, VCBO 50 V, IC max 500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 50 | V | IC = 50μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 40 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE = 50μA | 2 | ||
| Collector cut-off current | ICBO | 500 | nA | VCB = 50V | 2 | ||
| Emitter cut-off current | IEBO | 500 | nA | VEB = 4V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 300 | mV | IC = 50mA, IB = 2.5mA | 2 | ||
| DC current gain | hFE | 100 | 250 | 600 | - | VCE = 5V, IC = 50mA; pulsed | 2 |
| Input resistance (built-in bias resistor R1) | R1 | 1.54 | 2.2 | 2.86 | kΩ | 2 | |
| Collector-base voltage | VCBO | 50 | V | 2 | |||
| Collector-emitter voltage | VCEO | 40 | V | 2 | |||
| Emitter-base voltage | VEBO | 5 | V | 2 | |||
| Collector current | IC | 500 | mA | 2 | |||
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
DTD123TCHZGT116 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
dtd123tchzgt116-etched.step/dtd123tchzgt116-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dtd123tchzgt116.step/dtd123tchzgt116.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (6 pp, sha256
f64432cd0890d6c6, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).