STP20NK50Z from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET, protected by back-to-back Zener diodes with a gate-source breakdown voltage of minimum 30 V and VGS of ±30 V absolute maximum.
2	D	passive	Drain of the N-channel MOSFET, rated 500 V drain-source voltage and 17 A continuous drain current at TC = 25 °C; this pin is also electrically connected to the TAB.
3	S	passive	Source of the N-channel MOSFET, serving as the reference for the gate-source rating of ±30 V and the 500 V drain-source voltage.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-220
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			500	V		3
Gate-source voltage	VGS	-30		30	V		3
Drain current (continuous) at TC = 25 °C	ID			17	A	TC = 25 °C	3
Drain current (continuous) at TC = 100 °C	ID			10.71	A	TC = 100 °C	3
Drain current (pulsed)	IDM			68	A		3
Total dissipation at TC = 25 °C	PTOT			190	W	TC = 25 °C	3
Derating factor				1.52	W/°C		3
Insulation withstand voltage (RMS)	VISO			2500	V	t = 1 s; TC = 25 °C; from all three leads to external heat sink	3
Gate-source human body model ESD	ESD			6	kV	R=1.5 kΩ, C=100 pF	3
Peak diode recovery voltage slope	dv/dt			4.5	V/ns	ISD ≤ 17 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX	3
Storage temperature	Tstg	-55		150	°C		3
Max operating junction temperature	Tj			150	°C		3
Thermal resistance junction-case	Rthj-case			0.66	°C/W	TO-220	3
Thermal resistance junction-ambient	Rthj-amb			62.5	°C/W		3
Avalanche current, repetitive or not-repetitive	IAR			17	A	pulse width limited by Tj max	3
Single pulse avalanche energy	EAS			850	mJ	starting TJ=25 °C, ID=IAR, VDD=50 V	3
Drain-source breakdown voltage	V(BR)DSS	500			V	ID = 1 mA, VGS = 0	4
Zero gate voltage drain current	IDSS			1	µA	VDS = 500 V	4
Zero gate voltage drain current	IDSS			50	µA	VDS = 500 V, TC = 125 °C	4
Gate-body leakage current	IGSS	-10		10	µA	VGS = ± 20 V (VDS = 0)	4
Gate threshold voltage	VGS(th)	3	3.75	4.5	V	VDS = VGS, ID = 100 µA	4
Static drain-source on-resistance	RDS(on)		0.23	0.27	Ω	VGS = 10 V, ID = 8.5 A	4
Source-drain current	ISD			17	A		5
Source-drain current (pulsed)	ISDM			68	A	Pulsed: pulse duration=300µs, duty cycle 1.5%	5
Forward on voltage	VSD			1.6	V	ISD = 17 A, VGS = 0	5
Gate-source breakdown voltage	BVGSO	30			V	Igs = ± 1 mA (open drain)	5

CAD (KiCad official)

Symbol: STP20NK50Z
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220 (KiCad packages3D, STEP)
3D model files: stp20nk50z-etched.step / stp20nk50z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp20nk50z.step / stp20nk50z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (15 pp, sha256 a15aa9f204b21f53, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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STP20NK50Z

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