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verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 22h ago

STP20NK50Z

STMicroelectronics · MOSFETs · TO-220

STP20NK50Z from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, protected by back-to-back Zener diodes with a gate-source breakdown voltage of minimum 30 V and VGS of ±30 V absolute maximum.
2 D passive Drain of the N-channel MOSFET, rated 500 V drain-source voltage and 17 A continuous drain current at TC = 25 °C; this pin is also electrically connected to the TAB.
3 S passive Source of the N-channel MOSFET, serving as the reference for the gate-source rating of ±30 V and the 500 V drain-source voltage.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 500 V 3
Gate-source voltage VGS -30 30 V 3
Drain current (continuous) at TC = 25 °C ID 17 A TC = 25 °C 3
Drain current (continuous) at TC = 100 °C ID 10.71 A TC = 100 °C 3
Drain current (pulsed) IDM 68 A 3
Total dissipation at TC = 25 °C PTOT 190 W TC = 25 °C 3
Derating factor 1.52 W/°C 3
Insulation withstand voltage (RMS) VISO 2500 V t = 1 s; TC = 25 °C; from all three leads to external heat sink 3
Gate-source human body model ESD ESD 6 kV R=1.5 kΩ, C=100 pF 3
Peak diode recovery voltage slope dv/dt 4.5 V/ns ISD ≤ 17 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 3
Storage temperature Tstg -55 150 °C 3
Max operating junction temperature Tj 150 °C 3
Thermal resistance junction-case Rthj-case 0.66 °C/W TO-220 3
Thermal resistance junction-ambient Rthj-amb 62.5 °C/W 3
Avalanche current, repetitive or not-repetitive IAR 17 A pulse width limited by Tj max 3
Single pulse avalanche energy EAS 850 mJ starting TJ=25 °C, ID=IAR, VDD=50 V 3
Drain-source breakdown voltage V(BR)DSS 500 V ID = 1 mA, VGS = 0 4
Zero gate voltage drain current IDSS 1 µA VDS = 500 V 4
Zero gate voltage drain current IDSS 50 µA VDS = 500 V, TC = 125 °C 4
Gate-body leakage current IGSS -10 10 µA VGS = ± 20 V (VDS = 0) 4
Gate threshold voltage VGS(th) 3 3.75 4.5 V VDS = VGS, ID = 100 µA 4
Static drain-source on-resistance RDS(on) 0.23 0.27 Ω VGS = 10 V, ID = 8.5 A 4
Source-drain current ISD 17 A 5
Source-drain current (pulsed) ISDM 68 A Pulsed: pulse duration=300µs, duty cycle 1.5% 5
Forward on voltage VSD 1.6 V ISD = 17 A, VGS = 0 5
Gate-source breakdown voltage BVGSO 30 V Igs = ± 1 mA (open drain) 5

CAD (KiCad official)

  • Symbol: STP20NK50Z
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp20nk50z-etched.step / stp20nk50z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp20nk50z.step / stp20nk50z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 a15aa9f204b21f53, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF